Xiang Zheng

TL;DR: In this paper, a differential amplitude spectrum (DAS) from which the exact amount that a trap contributes to charging/discharging from the current transient is extracted theoretically and experimentally.

TL;DR: Time constant spectra are extracted from current transients based on the Bayesian deconvolution and used to characterize traps in GaN high-electron mobility transistors and observe that the trap in the AlGaN barrier layer requires sufficient electric field to activate the trapping process and a high drain voltage accelerates the trapping processes both in theAlGaN Barrier layer and the GaN layer.

TL;DR: In this paper, the authors studied how substrate thinning affected the electronic transport characteristics of AlGaN/GaN HEMTs and found that the degradation of electrical behavior were associated with structural degradation, as confirmed by the increase of pit density on the thinned sample surface.

TL;DR: In this article, the trap characteristics in BiFeO3 thin films were studied, which display a resistance switching effect caused by trapping/detrapping of charge carriers, indicating a close relationship between the escape frequency of the charge carriers and the structure ordering caused by polarization and filling of the traps.

TL;DR: In this paper, a thermal resistance measurement method for GaN high electron mobility transistor (HEMTs) is proposed based on temperature sensitive electrical parameter (TSEP) with the use of MOS switches to connect the drain-source at the beginning of the measurement processes.