Shiwei Feng

TL;DR: In this article, the self-heating effect on the drain current transient response in AlGaN/GaN high electron mobility transistors (HEMTs) was investigated experimentally.

TL;DR: In this article, a novel junction temperature measurement method for power metal-oxide-semiconductor field effect transistors ( mosfet s) is proposed, which is based on the turn-on delay of impulse signal.

TL;DR: In this paper, a differential amplitude spectrum (DAS) from which the exact amount that a trap contributes to charging/discharging from the current transient is extracted theoretically and experimentally.

TL;DR: In this paper, the thermal properties of AlGaAs/GaAs laser diode bars have been analyzed in detail by transient thermal technique based on the diode forward voltage method on the vertical and horizontal thermal conduction paths, respectively.

TL;DR: The results show that the peak temperature in pulse mode with the same operating frequency increases with the duty cycle under quasi-steady-state, but the changing rate decreases as the temperature goes up, which can be used to improve the lifetime and performance reliability.