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Xianmin Zhang
Researcher at Chinese Ministry of Education
Publications - 74
Citations - 1269
Xianmin Zhang is an academic researcher from Chinese Ministry of Education. The author has contributed to research in topics: Spintronics & Chemistry. The author has an hindex of 14, co-authored 52 publications receiving 860 citations. Previous affiliations of Xianmin Zhang include Northeastern University (China).
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Journal ArticleDOI
Properties and Applications of the β Phase Poly(vinylidene fluoride).
TL;DR: The basic knowledge and character methods for PVDF fabrication are discussed and an overview of recent advances on the phase modification and recent applications of the β phase PVDF are reported to provide an insight for the development and utilization of βphase PVDF nanofilms in future electronics.
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Gilbert Damping in Ni/Co Multilayer Films Exhibiting Large Perpendicular Anisotropy
Shigemi Mizukami,Xianmin Zhang,Takahide Kubota,Hiroshi Naganuma,Mikihiko Oogane,Yasuo Ando,Terunobu Miyazaki +6 more
TL;DR: Gilbert damping in perpendicularly magnetized Ni/Co multilayer films with Pt buffer and capping layers was investigated through the time-resolved magneto-optical Kerr effect under various applied magnetic field strengths and directions as discussed by the authors.
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Magnetoresistance effect in L10-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer
Qinli Ma,Tomohiro Kubota,Shigemi Mizukami,Xianmin Zhang,Hiroshi Naganuma,Mikihiko Oogane,Yasuo Ando,Terunobu Miyazaki +7 more
TL;DR: In this article, a thin Co layer was introduced between the MnGa layer and the MgO barrier layer to investigate interfacial effect on the device's magnetic and transport properties.
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Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D022-Mn3-δGa electrode and MgO barrier
Takahide Kubota,Yoshio Miura,D. Watanabe,Shigemi Mizukami,F. Wu,Hiroshi Naganuma,Xianmin Zhang,Mikihiko Oogane,Masafumi Shirai,Yasuo Ando,Terunobu Miyazaki +10 more
TL;DR: In this article, the tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-δGa (δ= 0.6) electrode was investigated in epitaxially grown Dn3Ga/MgO/Mm3Ga structures and the results revealed the existence of Δ1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.
Journal ArticleDOI
Laser-induced fast magnetization precession and gilbert damping for CoCrPt alloy thin films with perpendicular magnetic anisotropy
Shigemi Mizukami,D. Watanabe,Takahide Kubota,Xianmin Zhang,Hiroshi Naganuma,Mikihiko Oogane,Yasuo Ando,Terunobu Miyazaki +7 more
TL;DR: In this article, the magnetic field strength and angle dependences of spin dynamics in 4-nm-thick films of CoCrPt alloys with perpendicular magnetic anisotropy using the all-optical time-resolved magnetooptical Kerr effect (TRMOKE).