Showing papers by "Xinbo Yang published in 2021"
TL;DR: In this paper, the authors assess the economic impact of thermal effects on PV systems by establishing a temperature-dependent levelized cost of energy (LCOE) model and introduce an equivalent ratio γ (with the unit of absolute efficiency %/K) as a new metric that quantitatively translates the LCOE gain obtained by reducing the module temperature to an equivalent absolute power conversion efficiency increase.
30 citations
01 May 2021
TL;DR: In this paper, the authors proposed a method to support the work of the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award nos. OSR-2019-CARF/CCF-3097 and OSR2019-CRG-4093.
Abstract: F.X. and J.L. contributed equally to this work. This work was supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award nos.: OSR-2019-CARF/CCF-3097 and OSR-2019-CRG-4093
28 citations
TL;DR: In this paper, a detailed look into the development of copper metallization for silicon heterojunction (SHJ) solar cell is presented, which has a high potential to cut down the cost and improve cell efficiency by the remarkably reduced shading loss, increased electrode conduction and fill factor.
26 citations
13 citations
TL;DR: In this article, a simple and efficient solution-doping process for preparing high-quality polycrystalline silicon (poly-Si)-based passivating contacts was presented, which achieved simultaneously a low contact recombination parameter (J0c) of 2.4 and 12 fA/cm2 and low contact resistivity of 29 and 20 mΩ·cm2, respectively.
Abstract: In this work, we present a simple and efficient solution-doping process for preparing high-quality polycrystalline silicon (poly-Si)-based passivating contacts. Commercial phosphorus or boron-doping solutions are spin-coated on crystalline silicon (c-Si) wafers that feature SiO2/poly-Si layers; the doping process is then activated by thermal annealing at high temperatures in a nitrogen atmosphere. With optimized n- and p-type solution doping and thermal annealing, n- and p-type poly-Si passivating contacts featuring simultaneously a low contact recombination parameter (J0c) of 2.4 and 12 fA/cm2 and a low contact resistivity (ρc) of 29 and 20 mΩ·cm2 are achieved, respectively. Taking advantage of the single-sided nature of these solution-doping processes, c-Si solar cells with poly-Si passivating contacts of opposite polarity on the respective wafer surfaces are fabricated using a simple coannealing process, achieving the best power conversion efficiency (PCE) of 18.5% on a planar substrate. Overall, the solution-doping method is demonstrated to be a simple and promising alternative to gas/ion implantation doping for poly-Si passivating-contact manufacturing.
13 citations
9 citations
TL;DR: In this article, Xinyu Zhang is thanked for Raman spectroscopy characterizations and Mohamed Nejib Hedhili for XPS measurement under award no. OSR-CRGURF/1/3383.
Abstract: J.K., X.Y., and W.L. contributed equally to this work. Xinyu Zhang is thanked for Raman spectroscopy characterizations and Mohamed Nejib Hedhili for XPS measurement. This work was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRGURF/1/3383.
5 citations
Posted Content•
TL;DR: In this paper, the Staebler-Wronski effect was used to boost the dark conductance of trivalent boron (B)-doped a-Si:H thin films, which achieved a certificated power conversion efficiency of 25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer.
Abstract: Great achievements in last five years, such as record-efficient amorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edge perovskite/SHJ tandem solar cells, place hydrogenated amorphous silicon (a-Si:H) at the forefront of emerging photovoltaics. Due to the extremely low doping efficiency of trivalent boron (B) in amorphous tetravalent silicon, light harvesting of aforementioned devices are limited by their fill factors (FF), which is a direct metric of the charge carrier transport. It is challenging but crucial to develop highly conductive doped a-Si:H for minimizing the FF losses. Here we report intensive light soaking can efficiently boost the dark conductance of B-doped a-Si:H "thin" films, which is an abnormal Staebler-Wronski effect. By implementing this abnormal effect to SHJ solar cells, we achieve a certificated power conversion efficiency (PCE) of 25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer. This PCE is one of the highest reported values for total-area "top/rear" contact silicon solar cells. The FF reaches 98.30 per cent of its Shockley-Queisser limit.
1 citations