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Xingcheng Xiao

Researcher at General Motors

Publications -  296
Citations -  15709

Xingcheng Xiao is an academic researcher from General Motors. The author has contributed to research in topics: Lithium & Electrode. The author has an hindex of 62, co-authored 292 publications receiving 13446 citations. Previous affiliations of Xingcheng Xiao include Argonne National Laboratory & Chinese Academy of Sciences.

Papers
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Interface delamination study of diamond-coated carbide tools considering coating fractures

TL;DR: In this paper, a micro-scratch testing on diamond-coated carbide tools was conducted and finite element (FE) modeling was developed to simulate the scratching process, in which a cohesive zone interface and the extended finite element method (XFEM) were applied to investigate delamination and coating fracture behaviors, respectively.
Patent

Forming electrode active materials

TL;DR: In this article, a sacrificial layer is formed on a nanomaterial and carbon is then removed to form a void between the sacrificial and the carbon layer, which is then replaced by a titanium dioxide layer.
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Synthesis and field emission properties of hybrid structures of ultrananocrystalline diamond and vertically aligned carbon nanofibers

TL;DR: In this article, trananocrystalline diamond (UNCD) films with and without nitrogen doping were deposited onto vertically aligned carbon nanofibers (VACNFs) and the field emission properties of these hybrid structures were studied.
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Impact of surface chemistry on grain boundary induced intrinsic stress evolution during polycrystalline thin film growth.

TL;DR: First principles calculations were integrated with cohesive zone and growth chemistry models to demonstrate that adsorbed species can significantly alter stresses associated with grain boundary formation during polycrystalline film growth.
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Fracture size effect in ultrananocrystalline diamond : Applicability of weibull theory

TL;DR: In this article, an analysis of size effects and doping on the strength of ultrananocrystalline diamond (UNCD) thin films is presented, where the doping was achieved by the addition of nitrogen gas to the Ar/CH4 microwave plasma.