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Xingcheng Xiao
Researcher at General Motors
Publications - 296
Citations - 15709
Xingcheng Xiao is an academic researcher from General Motors. The author has contributed to research in topics: Lithium & Electrode. The author has an hindex of 62, co-authored 292 publications receiving 13446 citations. Previous affiliations of Xingcheng Xiao include Argonne National Laboratory & Chinese Academy of Sciences.
Papers
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Patent
Applications of a reversible dry adhesive system
Alan L. Browne,Tao Xie,John C. Ulicny,William R. Rodgers,Nilesh D. Mankame,Xingcheng Xiao,Nancy L. Johnson,Jessica A. Schroeder,John N. Owens,Ingrid A. Rousseau,Hamid G. Kia,Paul E. Krajewski +11 more
TL;DR: In this paper, a method including using a reversible dry adhesive system to reversibly couple a first substrate to a second substrate during building or reconfiguring a product is described, and the method is shown to be effective in a variety of applications.
Journal ArticleDOI
Study on the crystallization behavior of amorphous carbon nitride films
TL;DR: In this article, an amorphous carbon nitride was first prepared by DC reactive magnetron sputtering, followed by heat treatment under protective nitrogen and the ensuing thermal effects were analyzed by DTA-TG, XRD and XPS.
A comparison of mechanical properties of three MEMS materials - Silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon (Ta-C)
Horacio D. Espinosa,Bei Peng,Nicolaie Moldovan,T. A. Friedmann,Xingcheng Xiao,Derrick C. Mancini,Orlando Auciello,John A. Carlisle,Christian A. Zorman +8 more
TL;DR: In this paper, the authors investigated the mechanical properties of three new materials for MEMS/NEMS devices: silicon carbide (SiC), ultrananocrystalline diamond (UNCD) from Argonne National Laboratory (ANL), and hydrogen-free tetrahedral amorphous carbon (Ta-C) from Sandia National Laboratories (SNL).
Patent
Active electrode materials and methods for making the same
Xingcheng Xiao,Mei Cai +1 more
TL;DR: In this paper, a silicon-based active electrode material is introduced into a carrier gas and another active material precursor is introduced prior to, simultaneously with or subsequent to the silicon active material.