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Ya-Chi Hung
Researcher at National Sun Yat-sen University
Publications - 12
Citations - 487
Ya-Chi Hung is an academic researcher from National Sun Yat-sen University. The author has contributed to research in topics: Resistive random-access memory & Subthreshold conduction. The author has an hindex of 10, co-authored 12 publications receiving 440 citations. Previous affiliations of Ya-Chi Hung include Peking University.
Papers
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Journal ArticleDOI
Physical and chemical mechanisms in oxide-based resistance random access memory.
Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Rui Zhang,Ya-Chi Hung,Yong-En Syu,Yao-Feng Chang,Min-Chen Chen,Tian-Jian Chu,Hsin-Lu Chen,Chih-Hung Pan,Chih-Cheng Shih,Jin-Cheng Zheng,Simon M. Sze,Simon M. Sze +14 more
TL;DR: The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition.
Journal ArticleDOI
Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
Yong-En Syu,Ting-Chang Chang,Tsung-Ming Tsai,Ya-Chi Hung,Kuan-Chang Chang,Ming-Jinn Tsai,Ming-Jer Kao,Simon M. Sze +7 more
TL;DR: In this article, the authors investigated the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure, which is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament.
Journal ArticleDOI
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
Yi-Ting Tseng,Tsung-Ming Tsai,Ting-Chang Chang,Ting-Chang Chang,Chih-Cheng Shih,Kuan-Chang Chang,Rui Zhang,Kai-Huang Chen,Jung-Hui Chen,Yu-Chiuan Li,Chih-Yang Lin,Ya-Chi Hung,Yong-En Syu,Jin-Cheng Zheng,Simon M. Sze,Simon M. Sze +15 more
TL;DR: In this article, a SiOx layer was introduced into the ZnO layer of the structure to induce both typical bipolar resistive switching (RS) and complementary resistive switch (CRS).
Journal ArticleDOI
Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
Geng-Wei Chang,Ting-Chang Chang,Jhe-Ciou Jhu,Tsung-Ming Tsai,Yong-En Syu,Kuan-Chang Chang,Ya-Hsiang Tai,Fu-Yen Jian,Ya-Chi Hung +8 more
TL;DR: In this paper, N2O plasma treatment on active layer was expected to avert defects generation during SiO2 deposition process, which not only suppresses sub-reshold current stretch-out phenomenon but also significantly improves the bias stress stability in a-IGZO TFTs at high temperature.
Journal ArticleDOI
Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
Chih-Yang Lin,Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Chih-Hung Pan,Rui Zhang,Kuan-Hsien Liu,Hua-Mao Chen,Yi-Ting Tseng,Ya-Chi Hung,Yong-En Syu,Jin-Cheng Zheng,Ying-Lang Wang,Wei Zhang,Simon M. Sze +14 more
TL;DR: In this article, the automatic current compliance property for indium tin oxide (ITO) resistance random access memory (RRAM) was investigated by applying a varied stopvoltage measurement method, where different negative stop voltages were adopted to manipulate oxygen ions.