Y
Yang Liu
Researcher at University of Electronic Science and Technology of China
Publications - 83
Citations - 870
Yang Liu is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Terahertz radiation & Microstrip. The author has an hindex of 12, co-authored 83 publications receiving 635 citations. Previous affiliations of Yang Liu include University of Hong Kong & Nanyang Technological University.
Papers
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Journal ArticleDOI
Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix
Zhan Hong Cen,Tupei Chen,Liang Ding,Y. Liu,Ming Yang,Jen It Wong,Zhen Liu,Yang Liu,Stevenson Hon Yuen Fung +8 more
TL;DR: In this article, the effect of thermal annealing on the dielectric functions of implanted Si has been investigated, and it is shown that the suppressed Dielectric Functions of the implanted Si are dominated by the energy transitions related to the critical point E2.
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A Novel 3-dB Waveguide Hybrid Coupler for Terahertz Operation
Zhongqian Niu,Bo Zhang,Ji Dongfeng,Yang Yilin,Yang Liu,Yinian Feng,Yong Fan,Zhe Chen,Xiao Dong Chen,Daotong Li +9 more
TL;DR: In this paper, a 3-dB waveguide hybrid coupler with three coupling branches with a circular cutout at the top and bottom on both sides of the main branch is proposed.
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Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs
TL;DR: A gate field plate TFET (GFP-TFET) structure is proposed to enhance the driving current and suppress the current kink induced by fringe-induced barrier lowering and increase the subthreshold characteristics of this TFET.
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Magnetron Sputtered Ni‐rich Nickel Oxide Nano‐Films for Resistive Switching Memory Applications
TL;DR: In this article, the memory window was well maintained within the time limit of the experiment (5 × 104 s), exhibiting good memory retention, suggesting that the formation and annihilation of a conductive filament are responsible for the resistive switching behavior.
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Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
TL;DR: In this article, the authors investigated the resistive switching behavior of partially anodized aluminum thin film at temperatures of 25 $ √ hbox{C}$ −250 $√ h box{C]$.