Y
Yasuharu Suematsu
Researcher at Tokyo Institute of Technology
Publications - 255
Citations - 8820
Yasuharu Suematsu is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 42, co-authored 254 publications receiving 8695 citations. Previous affiliations of Yasuharu Suematsu include Sumitomo Electric Industries & Kōchi University.
Papers
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Gain and the threshold of three-dimensional quantum-box lasers
TL;DR: In this article, the electronic dipole moment and its polarization dependence are analyzed, and it is shown that the gain becomes maximum when the electric field of light is parallel to the longest side of the quantum box.
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GaInAsP/InP surface emitting injection lasers.
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Gain and intervalence band absorption in quantum-well lasers
TL;DR: In this article, the authors analyzed the electronic dipole moment in quantum-well structures and derived the linear gain taking into account the intraband relaxation, and showed that the effects of the intrusion relaxation are 1) shift of the gain peak toward shorter wavelength with increasing injected carrier density even in quantum well structures, 2) increase of gain spectrum width due to softening of the profile, and 3) reduction in the maximum gain by 30-40 percent.
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Analysis of gain suppression in undoped injection lasers
Minoru Yamada,Yasuharu Suematsu +1 more
TL;DR: In this paper, an analysis of gain suppression in injection lasers with an undoped active region and an index guiding structure is presented. And the results of this analysis explain the experimental data of well-designed injection lasers which have an unweighted active region, which is crucial for the operation of injection lasers in a single longitudinal mode.
Density-matrix theory of semiconductor lasers with relaxation broadening model - Gain and gain-suppression in semiconductor lasers
Masahiro Asada,Yasuharu Suematsu +1 more
TL;DR: In this paper, the density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments, which is given theoretically by the k. p method and is calculated for various semiconductor materials.