The development of optical gain in chemically synthesized semiconductor nanoparticles (nanocrystal quantum dots) has been intensely studied as the first step toward nanocrystal quantum dot lasers. We examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots. Narrowband stimulated emission with a pronounced gain threshold at wavelengths tunable with the size of the nanocrystal was observed, as expected from quantum confinement effects. These results unambiguously demonstrate the feasibility of nanocrystal quantum dot lasers.

http://science.sciencemag.org/content/sci/290/5490/314.full.pdf

Optical gain and stimulated emission in nanocrystal quantum dots.

Influences on the semiconductor laser properties of external optical feedback, i.e., return of a portion of the laser output from a reflector external to the laser cavity, have been examined. Experimental observations with a single mode laser is presented with analysis based on a compound cavity laser model, which has been found to explain essential features of the experimental results. In particular, it has been demonstrated that a laser with external feedback can be multistable and show hysteresis phenomena, analogous to those of non-linear Fabry-Perot resonator. It has also been shown that the dynamic properties of injection lasers are significantly affected by external feedback, depending on interference conditions between returned light and the field inside the laser diode.

External optical feedback effects on semiconductor injection laser properties

Slow light with a remarkably low group velocity is a promising solution for buffering and time-domain processing of optical signals. It also offers the possibility for spatial compression of optical energy and the enhancement of linear and nonlinear optical effects. Photonic-crystal devices are especially attractive for generating slow light, as they are compatible with on-chip integration and room-temperature operation, and can offer wide-bandwidth and dispersion-free propagation. Here the background theory, recent experimental demonstrations and progress towards tunable slow-light structures based on photonic-band engineering are reviewed. Practical issues related to real devices and their applications are also discussed. The unique properties of wide-bandwidth and dispersion-free propagation in photonic-crystal devices have made them a good candidate for slow-light generation. This article gives the background theory of slow light, as well as an overview of recent experimental demonstrations based on photonic-band engineering.

/pdf/slow-light-in-photonic-crystals-59fjoaj79v.pdf

Slow light in photonic crystals

1. Introduction and overview 2. Film stress and substrate curvature 3. Stress in anisotropic and patterned films 4. Delamination and fracture 5. Film buckling, bulging and peeling 6. Dislocation formation in epitaxial systems 7. Dislocation interactions and strain relaxation 8. Equilibrium and stability of surfaces 9. The role of stress in mass transport.

Thin Film Materials: Stress, Defect Formation and Surface Evolution

An overview of analog microwave photonics will be presented. The performance requirements for externally-modulated analog microwave photonic links will be reviewed with specific emphasis placed on modulator efficiency, laser noise, detected photocurrent, and link linearity.

http://ieeexplore.ieee.org/iel5/6387506/6403300/06403360.pdf

Microwave photonics

In this paper, experimental determination of the spontaneous-emission factor of an injection laser is presented. For a lot of conventional AlGaAs DH stripe lasers, spontaneous-emission factors of about 10-5were obtained from the measurement of the light intensity of a lasing mode versus the injected current. These values are in good agreement with the theoretical prediction based upon the classical wave theory. Brief discussion of the magnitude of the spontaneous-emission factor is given relating to the direct modulation characteristics of a semiconductor laser, which shows that the damping oscillation can be decreased in a laser consisting of very small active region.

Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasers

A resonance-like phenomenon is found from the analysis of the characteristics of the direct modulation of a junction laser with a bias current based on the rate equations.

Resonance-like characteristics of the direct modulation of a junction laser

Recent research on long-wavelength lightwave communication utilizing the wavelength region between 1.3 and 1.6 µm is reviewed with an eye toward future system development. The attraction of the long-wavelength region is the availability of the ultimately low-loss and wide-band features of the silica fiber, where minimum loss is 0.27 dB/km at a wavelength of 1.3 µm and 0.16 dB/km at 1.55 µm. The single-mode fiber has found its first significant applications in long-wavelength systems. The specific characteristics of lightwave components are discussed with focus on physical fundamentals. The practical performance of fibers and lightwave devices is surveyed. The dynamic properties of long-wavelength laser diodes are discussed in relation to fiber characteristics. The noise characteristics of long-wavelength detectors are considered for the purpose of specifying the repeater spacing. Some system studies are reviewed, for example, 1.3-µm-wavelength lightwave systems, which have demonstrated bandwidth-distance products of about 40 GHz ċ km. Various approaches to extend the capacity of long-wavelength lightwave transmission are given. In the future, the 1.5-µm wavelength system could operate at the lowest loss wavelength region extending from 1.5 to 1.65 µm. Much higher performance, for example, bandwidth-distance products of 185 GHz ċ km, achieved by further continuation of research and development on lightwave sources as well as fibers. Because of the author's familiarity with work in Japan, that work is emphasized and most frequently cited.

Long-wavelength optical fiber communication

A novel GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (BJB-DBR integrated laser for short) is proposed and demonstrated. In this structure, it is found theoretically that an efficient coupling of 98% between the active and butt-jointed external waveguides is available by matching the propagation constants and the field profiles of both waveguides, which gives relatively larger fabrication tolerance. Prototype BJB-DBR integrated lasers with emitting wavelength of 1.55 µm were fabricated, and single-longitudinal-mode operation was obtained at room temperature.

GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide

The lasing action of a Ga/sub 0.67/In/sub 0.33/As/GaInAsP/InP quantum-box (QB) laser with single-layer tensile-strained (TS)-QB active region is demonstrated for the first time. The fabricated QB is 30 nm in diameter and 12 nm thick with a period of 70 nm. The sample was fabricated by using two-step MOVPE growth, electron-beam-exposure (EBX) direct writing, and wet-chemical etching processes. The threshold current density was 7.6 KA/cm/sup 2/ at 77 K with pulse current injection.

Yasuharu Suematsu

Papers

Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasers

Resonance-like characteristics of the direct modulation of a junction laser

Long-wavelength optical fiber communication

GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide

Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser