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Journal ArticleDOI

Analysis of gain suppression in undoped injection lasers

Minoru Yamada, +1 more
- 01 Apr 1981 - 
- Vol. 52, Iss: 4, pp 2653-2664
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TLDR
In this paper, an analysis of gain suppression in injection lasers with an undoped active region and an index guiding structure is presented. And the results of this analysis explain the experimental data of well-designed injection lasers which have an unweighted active region, which is crucial for the operation of injection lasers in a single longitudinal mode.
Abstract
This paper gives an analysis and discussion of gain suppression in injection lasers which have an undoped active region and an index guiding structure. In previous papers, we used a semiclassical density‐matrix analysis to show that an injection laser with an updoped active region has a nearly, but not perfectly, homogeneous (or uniform) gain property under operating conditions due to the mode coupling effects by phase synchronization of electrons to the lasing field. The gain of adjacent modes is well suppressed by the oscillating mode, and single‐longitudinal‐mode operation is obtained in undoped injection lasers. However, such suppression depends closely on the spacial distribution of the resonating field and injected carrier density. In this paper, the suppression effect is examined theoretically considering electronic intraband relaxation, effects from the standing wave of the lasing field, spatial diffusion of carriers, etc. When the relaxation time is larger than 3×10−13 sec, the gain shows ’’hole burning,’’ namely, strong nonuniformity across the spectral or energy distributions, and, at the same time, the gain of some resonating modes is increased. Single‐longitudinal‐mode operation is not obtained in such a strongly inhomogeneous laser. When the relaxation time is smaller than 2×10−13 sec, the gain can be seen to be nearly homogeneous, and the gain of nonoscillating modes is sufficiently suppressed, that is, lower than that at threshold, because of the strong‐mode‐coupling effect. The relaxation time of GaAs is expected to be approximately 1×10−13 sec, implying 0.1% of excess suppression. The spatial distribution of the resonating field and induced ’’spatial hole burning’’ of carriers tends to increase the gain of higher transverse modes, but only weakly affects the fundamental transverse modes when the oscillating mode is the fundamental mode. It is then necessary to design the laser so that such higher transverse modes are cut off. The results of this analysis explain the experimental data of well‐designed lasers which have an undoped active region and an index guiding structure. Such a gain suppression effect is crucial for the operation of injection lasers in a single‐longitudinal mode.

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Citations
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Journal ArticleDOI

Gain and the threshold of three-dimensional quantum-box lasers

TL;DR: In this article, the electronic dipole moment and its polarization dependence are analyzed, and it is shown that the gain becomes maximum when the electric field of light is parallel to the longest side of the quantum box.
Journal ArticleDOI

Population pulsations and nondegenerate four-wave mixing in semiconductor lasers and amplifiers

TL;DR: In this article, the authors studied the physical processes that lead to population pulsations in nearly degenerate four-wave mixing, and showed that the gain and the index grating contribute to NDFWM.
Journal ArticleDOI

High speed quantum-well lasers and carrier transport effects

TL;DR: In this article, the authors developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include carrier transport effects on the high-speed properties of quantum-well lasers.
Journal ArticleDOI

Gain and intervalence band absorption in quantum-well lasers

TL;DR: In this article, the authors analyzed the electronic dipole moment in quantum-well structures and derived the linear gain taking into account the intraband relaxation, and showed that the effects of the intrusion relaxation are 1) shift of the gain peak toward shorter wavelength with increasing injected carrier density even in quantum well structures, 2) increase of gain spectrum width due to softening of the profile, and 3) reduction in the maximum gain by 30-40 percent.
Journal ArticleDOI

Frequency response of 1.3µm InGaAsP high speed semiconductor lasers

TL;DR: In this paper, the frequency response of a group of 1.3 μm InGaAsP vapor-phase-regrown buried heterostructure lasers of various cavity lengths is analyzed by fitting the measured response curves.
References
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Journal ArticleDOI

Theory of an Optical Maser

TL;DR: In this paper, a theoretical model for the behavior of an optical maser is presented in which the electromagnetic field is treated classically, and the active medium is made up of thermally moving atoms which acquire nonlinear electric dipole moments under the action of the field according to the laws of quantum mechanics.
Journal ArticleDOI

Spontaneous and Stimulated Recombination Radiation in Semiconductors

Gordon J Lasher, +1 more
- 20 Jan 1964 - 
TL;DR: In this article, the spectral line shapes of the radiation produced by band-to-band recombination of excess carriers in semi-conductors are calculated under the assumption that the momentum matrix element is the same for all initial and final states, i.e., that there is no momentum selection rule.
Journal ArticleDOI

Transverse mode stabilized Al x Ga 1-x As injection lasers with channeled-substrate-planar structure

TL;DR: In this paper, a built-in passive waveguide mechanism is introduced in Al x Ga 1-x As injection lasers by growing planar double heterostructure (DH) layers on a grooved GaAs substrate.
Journal ArticleDOI

Quantum-Mechanical Rate Equations for Semiconductor Lasers

TL;DR: In this article, the authors derived quantum rate equations for semiconductor lasers (SL) in the high-temperature limit for pure and highly doped III-V compound semiconductors.
Journal ArticleDOI

Longitudinal‐mode behaviors of mode‐stabilized AlxGa1−xAs injection lasers

TL;DR: In this paper, a transverse-mode-stabilized AlGaAs laser of a channeled-substrate planar structure was investigated, and the authors found that the intensity distribution and excitation dependence of a non-lasing longitudinal mode have been more complicated than expected from a simple theory.
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