Journal ArticleDOI
Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasers
TLDR
In this article, experimental determination of the spontaneous emission factor of an injection laser is presented, which is in good agreement with the theoretical prediction based upon the classical wave theory, which shows that the damping oscillation can be decreased in a laser consisting of very small active region.Abstract:
In this paper, experimental determination of the spontaneous-emission factor of an injection laser is presented. For a lot of conventional AlGaAs DH stripe lasers, spontaneous-emission factors of about 10-5were obtained from the measurement of the light intensity of a lasing mode versus the injected current. These values are in good agreement with the theoretical prediction based upon the classical wave theory. Brief discussion of the magnitude of the spontaneous-emission factor is given relating to the direct modulation characteristics of a semiconductor laser, which shows that the damping oscillation can be decreased in a laser consisting of very small active region.read more
Citations
More filters
Journal ArticleDOI
Analysis of gain suppression in undoped injection lasers
Minoru Yamada,Yasuharu Suematsu +1 more
TL;DR: In this paper, an analysis of gain suppression in injection lasers with an undoped active region and an index guiding structure is presented. And the results of this analysis explain the experimental data of well-designed injection lasers which have an unweighted active region, which is crucial for the operation of injection lasers in a single longitudinal mode.
Density-matrix theory of semiconductor lasers with relaxation broadening model - Gain and gain-suppression in semiconductor lasers
Masahiro Asada,Yasuharu Suematsu +1 more
TL;DR: In this paper, the density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments, which is given theoretically by the k. p method and is calculated for various semiconductor materials.
Journal ArticleDOI
Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers
Masahiro Asada,Yasuharu Suematsu +1 more
TL;DR: In this article, the density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments, which is given theoretically by the k. p method and is calculated for various semiconductor materials.
Journal ArticleDOI
Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor
TL;DR: In this paper, the authors calculated the lasing characteristics of current injection microdisk lasers of several microns in diameter, taking account of the scattering loss at center posts and the carrier diffusion effect.
Journal ArticleDOI
Short-cavity InGaAsP injection lasers: Dependence of mode spectra and single-longitudinal-mode power on cavity length
TL;DR: In this article, simple expressions are given to describe the lower and upper limits of the single-mode (single-frequency) power as a function of the cavity length for InGaAsP injection lasers.
References
More filters
Journal ArticleDOI
Dynamic behaviour of semiconductor lasers
TL;DR: In this paper, it was shown that spontaneous emission in a semiconductor injection laser has an important effect on the response of the laser to a step current and simple analytical approximations of the description of the transient response, also useful for the study of the response to other current waveforms, are derived.
Journal ArticleDOI
GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs
TL;DR: In this article, the GaAs-AlxGa1−xAs double heterostructure (DH) junction laser is shown to be a most suitable structure for studying lasing properties of GaAs as a result of complete optical and carrier confinement.
Journal Article
Theoretical Spontaneous Emission Factor of Injection Lasers
Journal ArticleDOI
Rate equation approach for diode lasers. I. Steady state solutions for a single diode
R. Salathé,C. Voumard,H. Weber +2 more
TL;DR: In this paper, the light output and the electron density within the active layer of a semiconductor laser have been calculated from the steady state solution, taking into account the spontaneous emission into the lasing modes.
Journal ArticleDOI
Intrinsic fluctuations in the output intensity of double‐heterostructure junction lasers operating continuously at 300°K
TL;DR: In this article, the intrinsic noise fluctuations in the light intensity from a stripe-geometry double-heterostructure junction laser operating continuously at room temperature were measured from 10 MHz to 4 GHz for currents both above and below threshold.