Y
Yasuhiro Shimamoto
Researcher at Hitachi
Publications - 108
Citations - 1745
Yasuhiro Shimamoto is an academic researcher from Hitachi. The author has contributed to research in topics: Gate dielectric & Electrode. The author has an hindex of 21, co-authored 108 publications receiving 1692 citations. Previous affiliations of Yasuhiro Shimamoto include Renesas Electronics & University of Tokyo.
Papers
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Journal ArticleDOI
Rutile-type TiO2 thin film for high-k gate insulator
Masaru Kadoshima,Masahiko Hiratani,Yasuhiro Shimamoto,Kazuyoshi Torii,Hiroshi Miki,Shinichiro Kimura,Toshihide Nabatame +6 more
TL;DR: In this article, a single phase of rutile-type TiO2 whose dielectric constant of approximately 75 was obtained when the film was deposited in an inert gas atmosphere and annealed at 800 °C in an oxidizing gas atmosphere.
Journal ArticleDOI
H2 damage of ferroelectric pb(zr,ti)o3 thin-film capacitors : the role of catalytic and adsorptive activity of the top electrode
TL;DR: In this paper, the authors investigated the behavior of hysteresis curves and the leakage current of capacitors with a top electrode of Pt, Pd, Au, or Ag and found that the H2 damage was strongly affected by the catalytic activity and adsorptive properties of the top electrode when exposed to H2.
Proceedings ArticleDOI
Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics
S. Tsujikawa,Toshiyuki Mine,Kikuo Watanabe,Yasuhiro Shimamoto,Ryuta Tsuchiya,K. Ohnishi,Takahiro Onai,Jiro Yugami,Shinichiro Kimura +8 more
TL;DR: In this article, the negative bias temperature instability (NBTI) of pMOSFETs with ultra-thin gate dielectrics was investigated from four points of view: basic mechanism of NBTI, dependence of nBTI on gate Dielectric thickness, mechanism of enhancement caused by addition of nitrogen to the gate dieectrics, and possibility of applying SiON gate dieslectrics with a high concentration of nitrogen.
Journal ArticleDOI
Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks
Shinichi Saito,Kazuyoshi Torii,Yasuhiro Shimamoto,Osamu Tonomura,Digh Hisamoto,Takahiro Onai,Masahiko Hiratani,Shinichiro Kimura,Yukiko Manabe,Matty Caymax,Jan Willem Maes +10 more
TL;DR: In this article, the authors examined the mobility reduction in metal-insulator-semiconductor field effect transistors (MISFETs) limited by remote charge scattering.
Journal ArticleDOI
The effects of the catalytic nature of capacitor electrodes on the degradation of ferroelectric Pb(Zr,Ti)O3 thin films during reductive ambient annealing
TL;DR: In this paper, the disappearance of ferroelectricity in Pb(Zr0.52,Ti0.48)O3 capacitors, which is caused by heat treatment in a reductive ambience, is investigated.