Y
Yi Wu
Researcher at Stanford University
Publications - 32
Citations - 4561
Yi Wu is an academic researcher from Stanford University. The author has contributed to research in topics: Resistive random-access memory & Vertical-cavity surface-emitting laser. The author has an hindex of 20, co-authored 32 publications receiving 3842 citations. Previous affiliations of Yi Wu include Oracle Corporation.
Papers
More filters
Journal ArticleDOI
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Journal ArticleDOI
An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
TL;DR: In this article, the multilevel capability of metal oxide resistive switching memory was explored for the potential use as a single-element electronic synapse device for the emerging neuromorphic computation system.
Journal ArticleDOI
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
TL;DR: In this paper, an exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in programming pulse amplitudes.
Journal ArticleDOI
A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification
TL;DR: A dynamic Verilog-A resistive random access memory (RRAM) compact model, including cycle-to-cycle variation, is developed for circuit/system explorations that not only captures dc and ac behavior, but also includes intrinsic random fluctuations and variations.
Journal ArticleDOI
$\hbox{Al}_{2}\hbox{O}_{3}$ -Based RRAM Using Atomic Layer Deposition (ALD) With 1- $\mu\hbox{A}$ RESET Current
TL;DR: Al2O3-based RRAM devices were fabricated using atomic layer deposition under 100°C and 300°C deposition temperatures, respectively, and their resistance-switching behaviors were investigated.