Y
Yichun Zhou
Researcher at Xiangtan University
Publications - 228
Citations - 5949
Yichun Zhou is an academic researcher from Xiangtan University. The author has contributed to research in topics: Ferroelectricity & Thin film. The author has an hindex of 39, co-authored 210 publications receiving 4881 citations. Previous affiliations of Yichun Zhou include Tohoku University.
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Eight logic states of tunneling magnetoelectroresistance in multiferroic tunnel junctions
TL;DR: In this article, a theoretical model based on multiferroic tunnel junction was proposed to produce eight different logic states by combining spin-filter effect and screening of polarization charges between two electrodes through a general spintronic tunneling.
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Indentation scale dependence of tip-in creep behavior in Ni thin films
TL;DR: In this article, the authors investigated the dependence of indentation creep behavior of Ni films and found that the creep rate, creep stain rate, indentation stress and even stress exponents are all indentation depth dependent.
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Finite Element Simulation on Thermal Fatigue of a Turbine Blade with Thermal Barrier Coatings
TL;DR: In this article, a finite element model was developed for a turbine blade with thermal barrier coatings to investigate its failure behavior under cyclic thermal loading, and dangerous regions in ceramic coating were determined in terms of the maximum principal stress criterion.
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CoCl2 Designed as Excellent Pseudocapacitor Electrode Materials
Kunfeng Chen,Kunfeng Chen,Yangyang Yang,Yangyang Yang,Keyan Li,Zengsheng Ma,Yichun Zhou,Dongfeng Xue,Dongfeng Xue +8 more
TL;DR: In this article, the authors reported that water-soluble CoCl2 electrodes can show a reversible redox reaction of Co2+ Co3+ Co4+ on the electrode and deliver very high specific pseudocapacitance of 1962 F/g.
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Memory Window and Endurance Improvement of Hf 0.5 Zr 0.5 O 2 -Based FeFETs with ZrO 2 Seed Layers Characterized by Fast Voltage Pulse Measurements
Wenwu Xiao,Chen Liu,Yue Peng,Shuaizhi Zheng,Qian Feng,Chunfu Zhang,Jincheng Zhang,Yue Hao,Min Liao,Yichun Zhou +9 more
TL;DR: This work investigates the advantage of employing ZrO2 seed layers on the MW, retention, and endurance of the Hf 0.5Zr0.5O2 (HZO)-based FeFETs with MFIS gate stacks, by using fast voltage pulse measurements and indicates that employing of a direct crystalline high-k/Si gate stack would further improve the MW and reliability of theHfO2-based Fe FETs.