Yin Wang

TL;DR: In this article, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) was demonstrated, and the results showed that the ICE plays an important role in the modulation of photoelectric performances.

TL;DR: In this paper, the authors proposed a circuit architecture that integrates monolayer MoS2 transistors in a two-transistor-one-capacitor (2T-1C) configuration, where the memory portion is similar to a 1T1C Dynamic Random Access Memory (DRAM) so that theoretically the cycling endurance and erase/write speed inherit the merits of DRAM.

TL;DR: The wafer-scale fabrication processes are guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing, and experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.

TL;DR: In this article, dual-gated (DG) MoS2 field effect transistors (FETs) are used to compensate the degraded switching performance of multilayer MOS2.

TL;DR: This review introduces the latest developments of the wafer-scale synthesis of continuous TMD films, then it presents recent advances in large scale devices and circuits based on T MD films, including logic, memory, optoelectronic and analog devices.