Y
Yuki Ishikawa
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 88
Citations - 963
Yuki Ishikawa is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Threshold voltage & Metal gate. The author has an hindex of 15, co-authored 88 publications receiving 897 citations.
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Proceedings Article
Comprehensive analysis of variability sources of FinFET characteristics
Takashi Matsukawa,Shin-ichi O'uchi,Kazuhiko Endo,Yuki Ishikawa,Hiromi Yamauchi,Y. X. Liu,Junichi Tsukada,Kunihiro Sakamoto,M. Masahara +8 more
TL;DR: In this paper, the influence of channel doping, fluctuation of gate length and fin thickness on the performance of undoped/doped channels with various gate materials was comprehensively investigated for SRAM.
Journal ArticleDOI
Variability Analysis of TiN Metal-Gate FinFETs
Kazuhiko Endo,Shin-ichi O'uchi,Yuki Ishikawa,Yongxun Liu,Takashi Matsukawa,Kunihiro Sakamoto,Junichi Tsukada,Hiromi Yamauchi,Meishoku Masahara +8 more
TL;DR: In this article, the variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate and the WFV is also responsible for the on-current variation.
Journal ArticleDOI
Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses
Yongxun Liu,Takashi Matsukawa,Kazuhiko Endo,M. Masahara,Shin-ichi O'uchi,K. Ishii,Hiromi Yamauchi,Junichi Tsukada,Yuki Ishikawa,Eiichi Suzuki +9 more
TL;DR: In this article, an asymmetric gate-oxide thickness of 3-terminal tied-gate FinFETs with variable threshold-voltage (Vth independent-gate fourterminal (4T) was developed using conventional reactive sputtering and resist etch-back processes.
Proceedings ArticleDOI
Suppressing V t and G m variability of FinFETs using amorphous metal gates for 14 nm and beyond
Takashi Matsukawa,Yongxun Liu,Wataru Mizubayashi,Junichi Tsukada,Hiromi Yamauchi,Kazuhiko Endo,Yuki Ishikawa,Shin-ichi O'uchi,Hiroyuki Ota,Shinji Migita,Yukinori Morita,Meishoku Masahara +11 more
TL;DR: Amorphous TaSiN metal gates (MGs) are successfully introduced in FinFETs to suppress work function variation (WFV) of the MG, which is a dominant contributor to threshold voltage (V t ) variability of the undoped channel MG finFET.
Proceedings ArticleDOI
On the gate-stack origin threshold voltage variability in scaled FinFETs and multi-FinFETs
Y. X. Liu,Kazuhiko Endo,Shin-ichi O'uchi,T. Kamei,Junichi Tsukada,Hiromi Yamauchi,Yuki Ishikawa,T. Hayashida,Kunihiro Sakamoto,Takashi Matsukawa,Atsushi Ogura,M. Masahara +11 more
TL;DR: In this article, the gate oxide thickness dependence of V t variation (VTV), the gate-stack origin, and gate oxide charge (Q ox ) variation (OCV) origin VTV were successfully separated in scaled FinFETs with gate length (L g ) down to 25 nm.