H
Hiromi Yamauchi
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 132
Citations - 1841
Hiromi Yamauchi is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Metal gate & Threshold voltage. The author has an hindex of 22, co-authored 132 publications receiving 1754 citations.
Papers
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Journal ArticleDOI
Demonstration, analysis, and device design considerations for independent DG MOSFETs
M. Masahara,Yongxun Liu,Kunihiro Sakamoto,Kazuhiko Endo,Takashi Matsukawa,K. Ishii,Toshihiro Sekigawa,Hiromi Yamauchi,Hisao Tanoue,Seigo Kanemaru,Hanpei Koike,Eiichi Suzuki +11 more
TL;DR: In this paper, a comprehensive study on the controllability of four-terminal-driven double-gate (DG) MOSFETs with independently switched DGs is presented.
Proceedings Article
Comprehensive analysis of variability sources of FinFET characteristics
Takashi Matsukawa,Shin-ichi O'uchi,Kazuhiko Endo,Yuki Ishikawa,Hiromi Yamauchi,Y. X. Liu,Junichi Tsukada,Kunihiro Sakamoto,M. Masahara +8 more
TL;DR: In this paper, the influence of channel doping, fluctuation of gate length and fin thickness on the performance of undoped/doped channels with various gate materials was comprehensively investigated for SRAM.
Journal ArticleDOI
A highly threshold Voltage-controllable 4T FinFET with an 8.5-nm-thick Si-fin channel
Yongxun Liu,M. Masahara,K. Ishii,Toshihiro Sekigawa,H. Takashima,Hiromi Yamauchi,Eiichi Suzuki +6 more
TL;DR: In this article, an orientation-dependent wet-etching technique was used to verify the controllability of high threshold voltage (V/sub th/)-controllable four-terminal (4T) FinFETs with an aggressively thinned Si-fin thickness.
Journal ArticleDOI
Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication
Yongxun Liu,S. Kijima,E. Sugimata,M. Masahara,Kazuhiko Endo,Takashi Matsukawa,K. Ishii,Kunihiro Sakamoto,Toshihiro Sekigawa,Hiromi Yamauchi,Y. Takanashi,Eiichi Suzuki +11 more
TL;DR: In this article, a conformal TiN deposition on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering has been demonstrated, where the work function of the TiN (phiTiN) slightly decreases with increasing nitrogen (N2) gas flow ratio, from 17% to 100%.
Proceedings ArticleDOI
Flexible threshold voltage FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel
Y. X. Liu,M. Masahara,K. Ishii,Toshiyuki Tsutsumi,Toshihiro Sekigawa,H. Takashima,Hiromi Yamauchi,Eiichi Suzuki +7 more
TL;DR: The FT-FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel have successfully been fabricated by using newly developed orientation-dependent wet etching.