K
Kunihiro Sakamoto
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 156
Citations - 1990
Kunihiro Sakamoto is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: MOSFET & Metal gate. The author has an hindex of 22, co-authored 156 publications receiving 1928 citations. Previous affiliations of Kunihiro Sakamoto include National Institute for Materials Science.
Papers
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Journal ArticleDOI
Demonstration, analysis, and device design considerations for independent DG MOSFETs
M. Masahara,Yongxun Liu,Kunihiro Sakamoto,Kazuhiko Endo,Takashi Matsukawa,K. Ishii,Toshihiro Sekigawa,Hiromi Yamauchi,Hisao Tanoue,Seigo Kanemaru,Hanpei Koike,Eiichi Suzuki +11 more
TL;DR: In this paper, a comprehensive study on the controllability of four-terminal-driven double-gate (DG) MOSFETs with independently switched DGs is presented.
Proceedings Article
Comprehensive analysis of variability sources of FinFET characteristics
Takashi Matsukawa,Shin-ichi O'uchi,Kazuhiko Endo,Yuki Ishikawa,Hiromi Yamauchi,Y. X. Liu,Junichi Tsukada,Kunihiro Sakamoto,M. Masahara +8 more
TL;DR: In this paper, the influence of channel doping, fluctuation of gate length and fin thickness on the performance of undoped/doped channels with various gate materials was comprehensively investigated for SRAM.
Journal ArticleDOI
Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication
Yongxun Liu,S. Kijima,E. Sugimata,M. Masahara,Kazuhiko Endo,Takashi Matsukawa,K. Ishii,Kunihiro Sakamoto,Toshihiro Sekigawa,Hiromi Yamauchi,Y. Takanashi,Eiichi Suzuki +11 more
TL;DR: In this article, a conformal TiN deposition on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering has been demonstrated, where the work function of the TiN (phiTiN) slightly decreases with increasing nitrogen (N2) gas flow ratio, from 17% to 100%.
Journal ArticleDOI
Atomically perfect bismuth lines on Si(001)
TL;DR: In this article, the authors proposed a model where three silicon dimers in the surface are replaced with two Bi dimers, with a rebonded missing dimer defect between them, and the lines are straight because of kinetic reasons rather than thermodynamic ones.
Journal ArticleDOI
Bismuth-induced structures on Si(001) surfaces
TL;DR: In this article, the authors examined Bi-induced surface structures of Si(001), formed in the vicinity of its desorption temperature, by means of scanning tunnelling microscopy and reflection high-energy electron diffraction.