Yongxun Liu

TL;DR: In this paper, a comprehensive study on the controllability of four-terminal-driven double-gate (DG) MOSFETs with independently switched DGs is presented.

TL;DR: In this article, an orientation-dependent wet-etching technique was used to verify the controllability of high threshold voltage (V/sub th/)-controllable four-terminal (4T) FinFETs with an aggressively thinned Si-fin thickness.

TL;DR: In this article, a conformal TiN deposition on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering has been demonstrated, where the work function of the TiN (phiTiN) slightly decreases with increasing nitrogen (N2) gas flow ratio, from 17% to 100%.

TL;DR: In this article, a Si-Fin channel double-gate MOSFET with smooth [110]-oriented sidewalls was fabricated for the first time using orientation-dependent wet etching, and the transconductance (g/sub m) normalized by 2/spl times/(Fin height) was found to be as high as 700 /spl mu/S/S//spl m/m at V/sub d/=1 V in the fabricated 13nm-thick and 82nm-high Si- Fin channel double gate MOS FET with a 105-

TL;DR: In this paper, a vertical ultrathin channel formation process for a vertical type double-gate (DG) MOSFET was proposed, where the ion-bombardment-retarded etching (IBRE) was used to reduce the channel thickness.