T
Takashi Matsukawa
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 295
Citations - 3019
Takashi Matsukawa is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: MOSFET & Field-effect transistor. The author has an hindex of 25, co-authored 295 publications receiving 2759 citations. Previous affiliations of Takashi Matsukawa include University of Tsukuba & Meiji University.
Papers
More filters
Journal ArticleDOI
Demonstration, analysis, and device design considerations for independent DG MOSFETs
M. Masahara,Yongxun Liu,Kunihiro Sakamoto,Kazuhiko Endo,Takashi Matsukawa,K. Ishii,Toshihiro Sekigawa,Hiromi Yamauchi,Hisao Tanoue,Seigo Kanemaru,Hanpei Koike,Eiichi Suzuki +11 more
TL;DR: In this paper, a comprehensive study on the controllability of four-terminal-driven double-gate (DG) MOSFETs with independently switched DGs is presented.
Journal ArticleDOI
Ultra-compact 8 × 8 strictly-non-blocking Si-wire PILOSS switch
Keijiro Suzuki,Ken Tanizawa,Takashi Matsukawa,Guangwei Cong,Sang-Hun Kim,Satoshi Suda,Morifumi Ohno,Tadashi Chiba,H. Tadokoro,M. Yanagihara,Yasushi Igarashi,Meishoku Masahara,Shu Namiki,Hitoshi Kawashima +13 more
TL;DR: A path-independent insertion-loss (PILOSS) 8 × 8 matrix switch based on Si-wire waveguides, which has a record-small footprint and demonstrates successful switching of digital-coherent 43-Gbps QPSK signal.
Proceedings Article
Comprehensive analysis of variability sources of FinFET characteristics
Takashi Matsukawa,Shin-ichi O'uchi,Kazuhiko Endo,Yuki Ishikawa,Hiromi Yamauchi,Y. X. Liu,Junichi Tsukada,Kunihiro Sakamoto,M. Masahara +8 more
TL;DR: In this paper, the influence of channel doping, fluctuation of gate length and fin thickness on the performance of undoped/doped channels with various gate materials was comprehensively investigated for SRAM.
Journal ArticleDOI
Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication
Yongxun Liu,S. Kijima,E. Sugimata,M. Masahara,Kazuhiko Endo,Takashi Matsukawa,K. Ishii,Kunihiro Sakamoto,Toshihiro Sekigawa,Hiromi Yamauchi,Y. Takanashi,Eiichi Suzuki +11 more
TL;DR: In this article, a conformal TiN deposition on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering has been demonstrated, where the work function of the TiN (phiTiN) slightly decreases with increasing nitrogen (N2) gas flow ratio, from 17% to 100%.
Journal ArticleDOI
Ultrathin channel vertical DG MOSFET fabricated by using ion-bombardment-retarded etching
M. Masahara,Yongxun Liu,Shinichi Hosokawa,Takashi Matsukawa,K. Ishii,Hisao Tanoue,Kunihiro Sakamoto,Toshihiro Sekigawa,Hiromi Yamauchi,Seigo Kanemaru,Eiichi Suzuki +10 more
TL;DR: In this paper, a vertical ultrathin channel formation process for a vertical type double-gate (DG) MOSFET was proposed, where the ion-bombardment-retarded etching (IBRE) was used to reduce the channel thickness.