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Yun-Heub Song
Researcher at Hanyang University
Publications - 106
Citations - 679
Yun-Heub Song is an academic researcher from Hanyang University. The author has contributed to research in topics: Flash memory & NAND gate. The author has an hindex of 9, co-authored 106 publications receiving 449 citations.
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Journal ArticleDOI
Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.
Shogo Hatayama,Yuji Sutou,Satoshi Shindo,Yuta Saito,Yun-Heub Song,Daisuke Ando,Junichi Koike +6 more
TL;DR: This work presents an inverse resistance change PCRAM with Cr2Ge2Te6 (CrGT) that shows a high-resistance crystalline reset state and a low-Resistance amorphous set state, and demonstrates how this can break the trade-off relationship between the crystallization temperature and operating speed.
Journal ArticleDOI
Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
Min Hoe Cho,Hyunju Seol,Aeran Song,Seonjun Choi,Yun-Heub Song,Pil Sang Yun,Kwun-Bum Chung,Jong Uk Bae,Kwon-Shik Park,Jae Kyeong Jeong +9 more
TL;DR: The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated in this paper.
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High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach.
Hyun Ji Yang,Hyeon Joo Seul,Min Jae Kim,Yerin Kim,Hyun Cheol Cho,Min Hoe Cho,Yun-Heub Song,Hoichang Yang,Jae Kyeong Jeong +8 more
TL;DR: The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited indium gallium oxide (IGO) (In1-xGaxO) films as high-mobility n-channel semiconducting layers was investigated and the In.66Ga0.34O transistor was found to show the most stable behavior against an external gate bias stress.
Journal ArticleDOI
Statistical Characterization of Noise and Interference in NAND Flash Memory
TL;DR: The results presented here can be used to construct a channel model with data-dependent noise and interference characteristics, which in turn can be utilized in designing and evaluating advanced coding and signal processing methods for flash memory.
Journal ArticleDOI
Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture
TL;DR: In this article, the authors proposed a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM).