Institution
Energy Conversion Devices
About: Energy Conversion Devices is a based out in . It is known for research contribution in the topics: Amorphous solid & Thin film. The organization has 684 authors who have published 1048 publications receiving 41793 citations.
Papers published on a yearly basis
Papers
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24 Jan 1983TL;DR: In this paper, a method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic cells on substrate material, whereby, at least six ammorphous semiconductor layers are continuously and sequentially deposited on the substrate material under steady state conditions.
Abstract: A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic cells on substrate material, whereby, at least six amorphous semiconductor layers are continuously and sequentially deposited on the substrate material under steady state conditions. The substrate material is driven from a supply core, through at least two triads of deposition chambers, to a take-up core. Each amorphous layer of each p-i-n-type cell is produced in one chamber of the triad of deposition chambers. In the first chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a first conductive semiconductor layer atop the substrate. In the second chamber of each triad of chambers, a gas mixture is introduced to deposit an intrinsic layer atop the first layer. And in the third chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a second conductive layer, opposite in conductivity from the first conductive layer, atop the intrinsic layer. The multiple chamber apparatus is constructed to substantially prevent (1) the dopant gases in the first or third chamber of each triad from contaminating the intrinsic gases in the second chamber of each triad of deposition chambers; and (2) the dopant gases in the third chamber of a preceding triad of deposition chambers and the dopant gases in the first chamber of a succeeding triad of deposition chambers from cross-contamination. In the preferred embodiment, the intrinsic material is an amorphous silicon alloy which is doped by boron to form a p-type alloy and doped by phosphorous to form an n-type alloy. The preferred embodiment further contemplates the use of a glow discharge deposition process wherein vacuum pressure conditions, temperature levels, reaction gas mixtures, reaction gas flow rates, cathode power generation levels, substrate speed of travel, and substrate tension are precisely controlled.
65 citations
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TL;DR: In this paper, the authors present a theory of non-destructive switching from a high resistance OFF state to a highly conducting ON state at a critical field between 0.5 and 0.7 MV/cm in thin films of chalcogenide glasses placed between two non-reacting contacts.
64 citations
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14 Dec 1981TL;DR: In this article, the disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies, which are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphized semiconductor alloys including a first intrinsic layer adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layers.
Abstract: The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.
64 citations
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TL;DR: In this paper, the role of Mn in C14 Laves phase alloys for battery applications was studied by adjusting the Mn content in exchange with Ni and Cr in three series of C14 AB2 Laves Phase alloys.
64 citations
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02 Oct 1986TL;DR: In this article, a process and apparatus for contiuously producing a relatively large-area, lightweight array of thin film semiconductor alloy photovoltaic cells having no substrate is presented.
Abstract: A process and apparatus for contiuously producing a relatively large-area, lightweight array of thin film semiconductor alloy photovoltaic cells having no substrate includes depositing a semiconductor alloy film, such as amorphous silicon, on a traveling surrogate substrate, applying a support material to the traveling film to give it mechanical strength and separating the film and support material from the traveling surrogate substrate. The surrogate substrate is preferably an endless stainless steel band from which the deposited alloy film is repeatedly stripped and on which deposits are repeatedly made. The apparatus may provide for the deposition and patterning of a back electrode on the substrate before deposition of the alloy film to form one set of electrical interconnections for the array. The apparatus may also provide for the deposition and patterning of a transparent, electrically conducting layer on the alloy film, before application of the support material, in order to form a second set of electrical interconnections for the array. The apparatus may also apply a protective, support material to the rear of the alloy film.
63 citations
Authors
Showing all 684 results
Name | H-index | Papers | Citations |
---|---|---|---|
Michael Shur | 102 | 1601 | 51697 |
Stanford R. Ovshinsky | 75 | 393 | 23001 |
Masud Mansuripur | 51 | 505 | 10497 |
Kazuyoshi Tanaka | 46 | 446 | 8751 |
Raphael Tsu | 41 | 197 | 12180 |
Bill R. Appleton | 37 | 176 | 6022 |
Jesús González-Hernández | 33 | 263 | 5037 |
Kwo Young | 32 | 98 | 2858 |
Stephen J. Hudgens | 32 | 76 | 5635 |
Prem Nath | 31 | 79 | 3165 |
Alan S. Edelstein | 28 | 168 | 2576 |
Baoquan Huang | 24 | 80 | 1523 |
Subhendu Guha | 24 | 80 | 2228 |
Michael A. Fetcenko | 24 | 39 | 1207 |
Guy C. Wicker | 24 | 54 | 4376 |