Showing papers by "Panasonic published in 1987"

Program recording scheduling apparatus using an optical reader

Abstract: The desired program information are read by an optical bar code reading section from a program medium containing program information for automatic broadcast program recording, such as, channels, dates, start times and end times in bar code form. After the program information thus read have been temporarily stored in a program memory section, a transfer switch is operated so that the program information stored in the program memory section are converted to infrared remote control signals and are then transmitted in a wireless manner to an electronic equipment (e.g., a video tape recorder) to be controlled, thereby recording the program for the recording of the desired broadcast program.

Design of high speed MOS multiplier and divider using redundant binary representation

Abstract: A high speed multiplier and divider for MOS LSI based on a new algorithm is presented. When we implement the multiplier and the divider in LSI, the features such as high speed operation, small number of transistors and easy layout are the most important factors. A computational algorithm using a redundant binary representation has several excellent features such as high speed addition operations. We improved the algorithm and the method of implementation, and designed an advanced multiplier and divider with the above mentioned features. We expect mat our multiplier and divider are excellent compared with multipliers using the Booth algorithm and the Wallace tree, and with divider using the SRT method, respectively.

Plasma processing apparatus for large area ion irradiation

Abstract: A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.

Effect of Heat Treatment after Cold Working on the Phase Transformation in TiNi Alloy

Abstract: Etude par calorimetrie differentielle a balayage des transformations de phases entre trois types: type CsCl, rhomboedrique et monoclinique dans les alliages Ti-49,7-50,2 et 50,6% at. Ni entre 633 et 933 K. Les transformations sont classees en trois types dependant de la temperature de traitement. Influence de la teneur en nickel

An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process

Abstract: An ultra-low on-resistance power MOSFET fabricated by use of a fully self-aligned process is demonstrated. The feature of the new process is that most of the processing steps, such as channel formation, gate definition, and contact-hole opening, are carried out through a single masking step. This permits a remarkable increase in packing density, and thereby conducts the reduction of the channel resistance. A gate width per unit area of 50 cm /mm2has been implemented by using the new process with a 4-µm-pitch layout rule. This value is at least four times larger than that of the conventional VDMOSFET. The experimentally fabricated device, which possesses a total gate width of 480 cm in a 3.8 mm × 4.0 mm chip, exhibited an on-resistance of 9 mΩ and a breakdown voltage of 30 V. The resulting on-resistance area product of 137 mΩ .mm2is the smallest value ever reported.

Wiring-device mounting structure

Abstract: A wiring-device mounting structure wherein outer decorative and inner laying plates are coupled to each other through relatively short, hooked engaging projections on inner surface of the decorative plate which are engaged with mounds on the laying plate which are raised to be close at raised top face to the inner surface of the decorative plate when coupled and to provide at side wall a locking face for hooked ends of the projections, whereby the raised mounds positioned in coupling zone between the both plates can minimize coupling distance between them and also the length of the engaging projections, so as to maintain the projections to be highly durable.

Ultrasonic probe having an ultrasonic propagation medium

Abstract: An ultrasonic probe having an ultrasonic propagation medium (8) is used in medical ultrasonic diagnostic systems for examination and inspection of inside of an examining body (9) by transmitting and receiving ultrasonic signals. The ultrasonic probe comprises a body (1), and the ultrasonic propagation medium (8) made of rubber cross-linked by cross linking agent. The ultrasonic propagation medium (8) is interposed between the examining body (9) and a portion for transmitting and receiving ultrasonic waves of the body (1) of the ultrasonic probe when the ultrasonic propagation medium (8) is used.

Optical information recording disk and optical information recording disk apparatus

Abstract: OF THE DISCLOSURE An optical information recording disk and optical information recording disk apparatus which increase the recording capacity of data recorded on the disk, and are capable of fast recording and reproduction. Logical tracks are arranged by sequentially merging physical tracks start-ing at the inner portion of the disk and physical tracks starting at the outer portion, and the number of sectors on corresponding tracks recorded at a constant linear density is invariably constant on the basis of the relation of arithmetical series. Consequently, the inventive system, despite of the MCAV system of constant disk speed, achieves track access and fast data transfer comparable with the conventional CAV system.

Method for removing impurities existing in semiconductor substrate

Abstract: A large quantity of oxygen (1018 cm-3) is dissolved in a semiconductor, for example, a silicon crystal substrate. In particular, in the SOI technology for forming a buried oxide film in silicon by oxygen ion implantation, a large quantity of oxygen (up to 1020 cm-3) is left over in the silicon top layer. Such oxygen in the silicon becomes fine precipitates (defects) by the subsequent heat treatment step. Disclosed is, hence, a method for obtaining a semiconductor substrate of high quality by removing impurities by implanting ions containing light element (for example, hydrogen) before heat treatment.

Bi-level image display signal processing apparatus

Abstract: An image signal processing apparatus for converting input signal values representing density levels of successive picture elements of an image to corresponding bi-level signal values, whereby a conversion error for an object picture element is apportioned among a set of unprocessed adjacent picture elements, to update respective values of accumulated error. Each input signal value is compensated, prior to conversion, by a value derived from the total accumulated errors of the object picture element and these adjacent picture elements, while the conversion error is derived by subtracting from the bi-level output value a value obtained by compensating the input signal by the accumulated error for the object picture element.

Multiplex signal processing apparatus

Abstract: A multiplex signal processing apparatus in a signal transmitting and receiving system includes at the transmitting side: a first amplitude-modulator for modulating a first carrier by a main signal to obtain a vestigial sideband, amplitude-modulated main signal; a second amplitude-modulator for modulating a second carrier which has the same frequency but differs in phase by 90° from the first carrier by a multiplex signal to obtain a double sideband, amplitude-modulated multiplex signal; an inverse Nyquist filter for filtering this signal to obtain a vestigial sideband, amplitude-modulated multiplex signal; and an adder for adding the vestigial sideband, amplitude-modulated main and multiplex signals to obtain a multiplexed signal. The apparatus at the receiving side includes: a Nyquist filter for filtering the multiplexed signal; a carrier regenerator for regenerating the first and second carriers from the multiplexed signal; a main signal detector for detecting the main signal from the multiplexed signal passed through the Nyquist filter by using the first carrier; a filter for removing quadrature distortion from the multiplexed signal; and a multiplex signal detector for detecting the multiplex signal from the multiplexed signal passed through the filter by using the second carrier. By inverse Nyquist filtering the auxiliary signal in quadrature to the picture carrier, a normal synchronous receiver will produce a conventional television signal without distortion (crosstalk) caused by quadrature distortion of an auxiliary signal containing additional picture information while at the same time allowing relatively simple demodulation of the auxiliary signal in improved receivers without adding distortion.

Television channel selection apparatus employing multi-picture display

Abstract: An apparatus for selecting one of a number of television channels is operable to be set in a mode whereby an array of miniature pictures corresponding to the respective channels is displayed, with each channel being sequentially selected for a predetermined interval during which image data for the selected channel are repetitively written into one of a set of regions (42 to 50) of a one-field memory, with the entire memory contents being continuously and repetitively read out, whereby the picture for the selected channel appears as a moving picture while those of the other channels are static. The apparatus can then be set in a normal operating mode, with the channel selected at the time of mode changeover being thereafter held fixedly selected and a normal display picture produced.

Video signal recording method and apparatus for field-segment recording

Abstract: A video signal recording method and apparatus for-recording each field of a video signal as a plurality of segments on respective tracks of a magnetic tape, in which each segment consists of a sequentially-ordered set of scanning lines which constitute a fraction of the total scanning lines of the field and which extend substantially over the entire field, for example all of the even-numbered or all of the odd-numbered lines of the field. Since each recording track contains scanning lines extending sequentially over one field, a playback signal providing a correctly ordered display image is obtained for playback operation at speeds higher or lower than the standard speed, while utilizing the same recording and playback signal processing circuits as are utilized during standard speed operation.

Method for production of thin film transistor array substrates

Abstract: A method of production of active matrix display substrates using thin film transistors and more particularly to a method for production of substrates for liquid-crystal display use. The active matrix substrate using the thin film transistor is produced by the mask processes of smaller number. The process of the present invention can reduce the number of the masks, by one, of the active matrix substrate using the inverted staggered thin film transistor which requires the masks from five levels to six levels. Further improvements reduce the number of the masks to four levels from three levels, thus contributing greatly towards lower cost, improved yield.

A nonlinear color-appearance model using estévez-hunt-pointer primaries

Abstract: The nonlinear color-appearance model of Nayatani et al. is reformulated by changing the fundamentals from the Pitt to the Estevez-Hunt-Pointer primaries. The predictions of the reformulated model correlate with the Munsell and the NCS schemes better than those of the original. Formulas for various color-appearance metrics are proposed, such as colorfulness, chroma, saturation, brightness (including a chromatic-component contribution), and others. In the present model, the normalizing illuminant D65 is used in the transformation from the CIE tristimulus values to those in the fundamental-primary system, and the normalizing illuminance is kept at 3,000 lx. The effects of changing the normalizing illuminant to D50 and the normalizing illuminance to 1,000 lx are studied. The results, however, show insignificant differences in the predictions of color appearance.

Editing apparatus for audio and video information

Abstract: Information including pictures, sounds, and characters is inputted. A form of the inputted information is converted into a prescribed format in accordance with properties of the information, and thus converted information is derived. A first storage means holds the inputted information and/or the converted information. The information held in the first storage means is edited, and thus edited information is derived. A reproduction sequence is generated. A second storage means holds the edited information. The information held in the first storage means and/or the second storage means is reproduced in the reproduction sequence to allow a check on the information and the reproduction sequence. The information held in the first storage means or the second storage means is outputted for manufacturing a recording medium.

Method of making symmetrically controlled implanted regions using rotational angle of the substrate

Abstract: A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.

Projection optical system for use in precise copy

Abstract: A projection optical system for use in a precise copy which uses a pair of catadioptric optical systems (I and II) consisting of convex mirrors (2, 6), concave mirrors (3, 5), and phase correction members (4, 4') is shown. Two catadioptric optical systems (I and II) commonly use an entrance pupil (E, EP) on a coaxis and are coupled so as to respectively face the phase correction members (4, 4'). Each of the concave mirrors (3, 5) has an opening at the center. Each of the convex mirrors (2, 6) has no opening in one embodiment but has an opening portion at the center in another embodiment.

Video signal recording and playback apparatus having varied-speed playback capability

Abstract: A video signal recording and playback apparatus for recording each field of a video signal as a plurality of segments on a plurality of tracks, including a circuit for inserting segment index signals after conversion of the video signal to a recording signal, to be recorded together with the recording signal to designate the respective segments. During varied-speed playback operation, the segment index signals are detected in the playback signal, and the data thus obtained are used to control the operation of a memory which temporarily stores successively produced portions of the playback signal. A playback signal can thereby be obtained by combining output signals from the memory, which will produce a satisfactory display image during varied-speed playback operation, e.g. during high-speed playback, with only simple signal processing being required.

Optical disk, optical disk recording and reproducing apparatus and copy preventive method for optical disks

Abstract: In an optical disk system of the type including an optical disk for performing the recording and reproduction of data by use of a semiconductor laser and an optical disk recording and reproducing apparatus, an optical disk, optical disk recording and reproducing apparatus and copy preventive method for optical disks capable of preventing copying of the stored data from one optical disk on another. Irrespective of the kinds of optical disks, such as, read only-type optical disk, DRAW-type optical disk and erasable optical disk, each of the optical disks is provided in common with sectors from which data can be reproduced but not recorded on, i.e., data record-protected sectors and at least part of the stored data is stored in the record-protected sectors of the optical disk, thereby protecting the stored data from being recorded on the same address sectors of another recordable optical disk forming a part of the optical disk system.

Automatic heating appliance with ultrasonic sensor

Abstract: A heating appliance comprising a heating chamber, a heater for heating an object which is encased in the heating chamber and a turntable provided in the heating chamger and arranged to be rotatable about its own axis and to hold thereon the object. Included therein are an ultrasonic sensor for transmitting an ultrasonic wave toward said object and receiving an echo wave returning therefrom and a control unit for controlling the ultrasonic sensor. The control unit successively calculates the distances of the object from said ultrasonic sensor on the basis of the transmission and reception of the ultrasonic wave and determines the heating condition of the object on the basis of the successively calculated distances and controlling the heater in accordance with the determined distinctive feature. This does not require an input operation in terms of the class and category of the object to be heated, resulting in improving the automation of the heating appliance.

Bedsore-preventing air mattress controller

Abstract: A bedsore-preventing air mattress controller provided with an air pump for generating a magnetomotive force in a plurality of stages proportional to the feed air amount of the pump, and with an electric switch for changing over the magnetomotive force of the pump and integrally assembled with an air shut-off valve for discharging and halting air, whereby the controller arrangement is simplified to effectively reduce the required number of parts for lowering manufacturing costs.

A practical trench isolation technology with a novel planarization process

Abstract: We develop a new vertical-trench isolation method that utilizes a thin SiO 2 film in-between double photoresists for uniform top-resist coating and for an etch-back barrier, a poly-silicon film above active regions for an etch-back buffer and large tilt-angle boron ion implantations into the trench-sidewalls for narrow channel effect control. The Planarization with the Resist / Oxide / Resist and the Poly _Silicon (PRORPS) can isolate the whole surface of a 6 inch-diameter wafer very uniformly with a large process margin. The standard deviation of the threshold voltage of a n-channel MOS-FET (W/L= 10µm/0.8µm) over the whole wafer is 0.38 % at about 0.6 V threshold voltage. The narrow-channel-effect is controlled for FET's down to 0.5 µm channel width. The method is applied to the megabit SCC (Surrounded Capacitor Cell) DRAM developed here and the cells and the peripheral-circuits are isolated at the same time successfully.

Piezoelectrically driving device

Abstract: A piezoelectrically driving device comprises a driving part including paired opposing pole parts substantially square shaped in section, piezoelectric elements provided at least to two adjacent faces of each of the opposing pole parts for causing them to flectionally vibrate resonantly in response to an applied high frequency voltage, and a contact member contactable with one face of each of the opposing pole parts for movement relative thereto or vice versa due to the vibration, any energy loss upon which movement is thereby remarkable restrained and a mechanical driving force can be obtained highly efficiently.

Method of joining beam leads with projections to device electrodes

Abstract: Disclosed is a method for making beam leads with projections and for joining such beam leads to electrodes of a semiconductor device. On a substrate (10), beam leads (12) with projections (12A) are concurrently formed using a single process. Semiconductor device (16) is pressed to beam lead (2) to join electrode (14) to projection (12A). When the semiconductor device is lifted, beam leads which are joined into the device are removed from the substrate. The concurrent formation of the beam leads (12) and projections (12A) can be carried out by plating using a substrate (10) having either a projection (10A) or a region (24A) of different resistance.

Matrix address display apparatus having conductive lines and pads for repairing defects

Abstract: A rescue line (18) is provided around the pixel part having display elements disposed on cross points of scanning lines (1) and signal lines (2) disposed vertically to the scanning lines (1): When one of the scanning lines (1) or the signal lines (2) is broken, the rescue line (18) is connected to both ends of the break line by the bonding pads for feeding the signal to the break line, and thereby defective function is restored.

A new isolation method with boron-implanted sidewalls for controlling narrow-width effect

Abstract: A new isolation method for high packing density MOS devices has been developed. In this method the LOCOS technique is applied to wide isolation regions and the buried-oxide technique is applied to isolation regions less than 2 µm wide. No additional masks are needed in order to form SiO 2 film in the wide field regions because the photoresist is thicker near steps and inside the narrow trenches. For reducing the hump that appears in subthreshold current characteristics of n-channel MOSFET's, Using buried-oxide isolation, tilt-angle implantation to each of the four sidewalls is performed as a channel stop. The Sidewall channel stop can also control the narrow-channel effect.

Phase locked loop circuit with quickly recoverable stability

Abstract: A PLL circuit for a phase comparator, a low-pass filter (LPF), a voltage-controlled oscillator (VCO) and a frequency divider. A first control circuit is responsive to a discontinuous phase change of a reference signal of the PLL circuit for inhibiting the operation of the phase comparator or disconnecting the LPF from the phase comparator during a predetermined period so that the discontinuous phase change information is not transmitted through the LPF to the VCO. At the same time, a second control circuit resets the frequency divider by a pulse of the reference signal after the discontinuous phase change or applies a voltage corresponding to the discontinuous phase change to the VCO so that the output signal of the frequency divider is locked in phase to the reference signal after the discontinuous phase change. With the cooperation of the first and second control circuits, the PLL circuit quickly recovers its stable state after the discontinuous phase change of the reference signal.

Method for producing an amorphous silicon semiconductor device using a multichamber PECVD apparatus

Abstract: A method of producing an amorphous silicon semiconductor device makes use of a capacitance-coupled high-frequency glow-discharge semiconductor production apparatus which is equipped with a plurality of glow-discharge chambers each having a high-frequency electrode and a substrate holder opposing each other and means for supplying material gases to the glow-discharge chambers. A reaction of a material gas is effected in a first glow-discharge chamber, so as to form a semiconductor layer having a first conductivity type on a substrate introduced into the first glow-discharge chamber, and, after moving the substrate into a second glow-discharge chamber, a reaction of a material gas different from the material gas used in the first glow-discharge chamber is effected, thereby forming a semiconductor layer having a second conductivity type on the semiconductor layer of the first conductivity type. The substrate with the semiconductor layer of the first conductivity formed thereon is moved from the first glow-discharge chamber to the second glow-discharge chamber after a predetermined gas atmosphere is formed in the first glow-discharge chamber. The distance between the electrode and the substrate holder is made smaller in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers. The temperature of the substrate is set higher in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers.