Showing papers in "arXiv: Materials Science in 1996"

Extracting convergent surface energies from slab calculations

Abstract: The formation energy of a solid surface can be extracted from slab calculations if the bulk energy per atom is known. It has been pointed out previously that the resulting surface energy will diverge with slab thickness if the bulk energy is in error, in the context of calculations which used different methods to study the bulk and slab systems. We show here that this result is equally relevant for state-of-the-art computational methods which carefully treat bulk and slab systems in the same way. Here we compare different approaches, and present a solution to the problem that eliminates the divergence and leads to rapidly convergent and accurate surface energies.

Surface Effects in Ferroelectrics: Periodic Slab Computations for BaTiO_3

Abstract: Total energies, electronic structure, surface energies, polarization, potentials and charge densities were studied for slabs of BaTiO_3 using the Linearized Augmented Plane Wave (LAPW) method. The depolarization field inhibits ferroelectricity in the slabs, and the macroscopic field set up across a ferroelectric slab is sufficient to cause electronic states to span the gap and give a metallic band structure, but the band shifts are not rigid and O p states tend to pile up at the Fermi level. There are electronic surface states, especially evident on TiO_2 surfaces. The dangling bonds bond back to the surface Ti's and make the surface stable and reactive. The BaO surfaces are more ionic than the bulk.

A Non-Local Formulation of the Peierls Dislocation Model

Abstract: Cohesive zone models provide an illuminating and tractable way to include constitutive nonlinearity into continuum models of defects. Powerful insights have been gained by studying both dislocations and cracks using such analyses. Recent work has shown that as a result of the locality assumption present in such cohesive zone models, significant errors can be made in the treatment of defect energies. This paper aims to construct a non-local version of the Peierls-Nabarro model in which the atomic level stresses induced at the slip plane depend in a non-local way on the slip degrees of freedom. The non-local interplanar kernel is computed directly from atomistics and is used to evaluate both the structure and energetics of planar dislocations. The non-local formulation does not significantly change the dislocation core structure from that obtained with the local model, but the new formulation leads to significant improvements in the description of dislocation energetics for dislocations with planar cores.

Modeling of Dislocation Structures in Materials

Abstract: A phenomenological model of the evolution of an ensemble of interacting dislocations in an isotropic elastic medium is formulated. The line-defect microstructure is described in terms of a spatially coarse-grained order parameter, the dislocation density tensor. The tensor field satisfies a conservation law that derives from the conservation of Burgers vector. Dislocation motion is entirely dissipative and is assumed to be locally driven by the minimization of plastic free energy. We first outline the method and resulting equations of motion to linear order in the dislocation density tensor, obtain various stationary solutions, and give their geometric interpretation. The coupling of the dislocation density to an externally imposed stress field is also addressed, as well as the impact of the field on the stationary solutions.

Six-Dimensional Quantum Dynamics of Adsorption and Desorption of H_2 at Pd(100): No Need for a Molecular Precursor Adsorption State

Abstract: We report six-dimensional quantum dynamical calculations of dissociative adsorption and associative desorption of the system H_2/Pd(100) using an ab-initio potential energy surface. We focus on rotational effects in the steering mechanism, which is responsible for the initial decrease of the sticking probability with kinetic energy. In addition, steric effects are briefly discussed.

Models for diffusion and island growth in metal monolayers

Abstract: A model that describes self diffusion, island nucleation and film growth on FCC(001) metal substrates is presented. The parameters of the model are optimized to describe Cu diffusion on Cu(001), by comparing activation energy barriers to a full set of barriers obtained from semi-empirical potentials via the embedded atom method. It is found that this model (model I), with only three parameters, provides a very good description of the full landscape of hopping energy barriers. These energy barriers are grouped in four main peaks. A reduced model (model II) with only two parameters, is also presented, in which each peak is collapsed into a single energy value. From the results of our simulations, we find that this model still maintains the essential features of diffusion and growth on this model surface. We find that hopping rates along island edges are much higher than for isolated atoms (giving rise to compact island shapes) and that vacancy mobility is higher than adatom mobility. We observe substantial dimer mobility (comparable to the single atom mobility) as well as some mobility of trimers. Mobility of small islands affects the scaling of island density $N$ vs. deposition rate $F$, $N ~ F^\gamma$, as well as the island size distribution. In the asymptotic limit of slow deposition, scaling arguments and rate equations show that $\gamma = i*/(2 i* + 1)$ where $i*$ is the size of the largest mobile island. Our Monte Carlo results, obtained for a range of experimentally relevant conditions, show $\gamma = 0.32$ for the EAM, 0.33 for model I and 0.31 for model II barriers. These results are lower than the anticipated $\gamma >= 0.4$ due to dimer (and trimer) mobility.

Ab-initio study of oxygen vacancies in alpha-quartz

Abstract: Extrinsic levels, formation energies, and relaxation geometries are calculated ab initio for oxygen vacancies in alpha-quartz SiO2. The vacancy is found to be thermodynamically stable in the charge states Q=+3, Q=0, Q=--2, and Q=-3. The charged states are stabilized by large and asymmetric distortions near the vacancy site. Concurrently, Franck-Condon shifts for absorption and recombination related to these states are found to be strongly asymmetric. In undoped quartz, the ground state of the vacancy is the neutral charge state, while for moderate p-type and n-type doping, the +3 and -3 states are favored, respectively, over a wide Fermi level window. Optical transitions related to the vacancy are predicted at around 3 eV and 6.5 eV (absorption) and 2.5 to 3.0 eV (emission), depending on the charge state of the ground state.

Finite Sized Atomistic Simulations of Screw Dislocations

Abstract: The interaction of screw dislocations with an applied stress is studied using atomistic simulations in conjunction with a continuum treatment of the role played by the far field boundary condition. A finite cell of atoms is used to consider the response of dislocations to an applied stress and this introduces an additional force on the dislocation due to the presence of the boundary. Continuum mechanics is used to calculate the boundary force which is subsequently accounted for in the equilibrium condition for the dislocation. Using this formulation, the lattice resistance curve and the associated Peierls stress are calculated for screw dislocations in several close packed metals. As a concrete example of the boundary force method, we compute the bow out of a pinned screw dislocation; the line-tension of the dislocation is calculated from the results of the atomistic simulations using a variational principle that explicitly accounts for the boundary force.

Slip energy barriers in aluminum and implications for ductile versus brittle behavior

Abstract: We conisder the brittle versus ductile behavior of aluminum in the framework of the Peierls-model analysis of dislocation emission from a crack tip. To this end, we perform first-principles quantum mechanical calculations for the unstable stacking energy $\gamma_{us}$ of aluminum along the Shockley partial slip route. Our calculations are based on density functional theory and the local density approximation and include full atomic and volume relaxation. We find that in aluminum $\gamma_{us} = 0.224$ J/m$^2$. Within the Peierls-model analysis, this value would predict a brittle solid which poses an interesting problem since aluminum is typically considered ductile. The resolution may be given by one of three possibilites: (a) Aluminum is indeed brittle at zero temperature, and becomes ductile at a finite temperature due to motion of pre-existing dislocations which relax the stress concentration at the crack tip. (b) Dislocation emission at the crack tip is itself a thermally activated process. (c) Aluminum is actually ductile at all temperatures and the theoretical model employed needs to be significantly improved in order to resolve the apparent contradiction.

The Melting Curve and Premelting of MgO

Abstract: The melting curve for MgO was obtained using molecular dynamics and a non-empirical, many-body potential. We also studied premelting effects by computing the dynamical structure factor in the crystal on approach to melting. The melting curve simulations were performed with periodic boundary conditions with cells up to 512 atoms using the ab-initio Variational Induced Breathing (VIB) model. The melting curve was obtained by computing $% \Delta H_m$ and $\Delta V_m$ and integrating the Clapeyron equation. Our $% \Delta H_m$ is in agreement with previous estimates and we obtain a reasonable $\Delta V_m$, but our melting slope dT/dP (114 K/GPa) is three times greater than that of Zerr and Boehler [1994] (35 K/GPa), suggesting a problem with the experimental melting curve, or an indication of exotic, non-ionic behavior of MgO liquid. We computed $S(q,\omega)$ from simulations of 1000 atom clusters using the Potential Induced Breathing (PIB) model. A low frequency peak in the dynamical structure factor $% S(q,\omega)$ arises below the melting point which appears to be related to the onset of bulk many-atom diffusive exchanges. These exchanges may help destabilize the crystalline state and be related to intrinsic crystalline instability suggested in earlier simulations.

Invertible and Non-invertible Alloy Ising Models

Abstract: Physical properties of alloys are compared as computed from ``direct'' and ``inverse'' procedures. The direct procedure involves Monte Carlo simulations of a set of local density approximation (LDA)-derived pair and multibody interactions { u_f}, generating short-range order (SRO), ground states, order- disorder transition temperatures, and structural energy differences. The inverse procedure involves ``inverting'' the SRO generated from { u_f} via inverse-Monte-Carlo to obtain a set of pair only interactions {\tilde{ u}_f}. The physical properties generated from {\tilde{ u}_f} are then compared with those from { u_f}. We find that (i) inversion of the SRO is possible (even when { u_f} contains multibody interactions but {\tilde{ u}_f} does not) but, (ii) the resulting interactions {\tilde{ u}_f} agree with the input interactions { u_f} only when the problem is dominated by pair interactions. Otherwise, {\tilde{ u}_f} are very different from { u_f}. (iii) The same SRO pattern can be produced by drastically different sets { u_f}. Thus, the effective interactions deduced from inverting SRO are not unique. (iv) Inverting SRO always misses configuration-independent (but composition- dependent) energies such as the volume deformation energy G(x); consequently, the ensuing {\tilde{ u}_f} cannot be used to describe formation enthalpies or two-phase regions of the phase diagram, which depend on G(x).

Theoretical Analysis of STM Experiments at Rutile TiO_2 Surfaces

Abstract: A first-principles atomic orbital-based electronic structure method is used to investigate the low index surfaces of rutile Titanium Dioxide. The method is relatively cheap in computational terms, making it attractive for the study of oxide surfaces, many of which undergo large reconstructions, and may be governed by the presence of Oxygen vacancy defects. Calculated surface charge densities are presented for low-index surfaces of TiO$_2$, and the relation of these results to experimental STM images is discussed. Atomic resolution images at these surfaces tend to be produced at positive bias, probing states which largely consist of unoccupied Ti 3$d$ bands, with a small contribution from O 2$p$. These experiments are particularly interesting since the O atoms tend to sit up to 1 angstrom above the Ti atoms, so providing a play-off between electronic and geometric structure in image formation.

A Model for the Thermal Expansion of Ag(111) and other Metal Surfaces

Abstract: We develop a model to study the thermal expansion of surfaces, wherein phonon frequencies are obtained from ab initio total energy calculations. Anharmonic effects are treated exactly in the direction normal to the surface, and within a quasiharmonic approximation in the plane of the surface. We apply this model to the Ag(111) and Al(111) surfaces, and find that our calculations reproduce the experimental observation of a large and anomalous increase in the surface thermal expansion of Ag(111) at high temperatures [P. Statiris, H.C. Lu and T. Gustafsson, Phys. Rev. Lett. 72, 3574 (1994)]. Surprisingly, we find that this increase can be attributed to a rapid softening of the in-plane phonon frequencies, rather than due to the anharmonicity of the out-of-plane surface phonon modes. This provides evidence for a new mechanism for the enhancement of surface anharmonicity. A comparison with Al(111) shows that the two surfaces behave quite differently, with no evidence for such anomalous behavior on Al(111).

Development of a Kohn-Sham like potential in the Self-Consistent Atomic Deformation Model

Abstract: This is a brief description of how to derive the local ``atomic'' potentials from the Self-Consistent Atomic Deformation (SCAD) model density function. Particular attention is paid to the spherically averaged case.

Ab initio simulations of liquid systems: Concentration dependence of the electric conductivity of NaSn alloys

Abstract: Liquid NaSn alloys in five different compositions (20, 40, 50, 57 and 80% sodium) are studied using density functional calculations combined with molecular dynamics(Car-Parrinello method). The frequency-dependent electric conductivities for the systems are calculated by means of the Kubo-Greenwood formula. The extrapolated DC conductivities are in good agreement with the experimental data and reproduce the strong variation with the concentration. The maximum of conductivity is obtained, in agreement with experiment, near the equimolar composition. The strong variation of conductivity, ranging from almost semiconducting up to metallic behaviour, can be understood by an analysis of the densities-of-states.

Fragmentation Phase Transition in Atomic Clusters II -----Symmetry of Fission of Metal Clusters----

Abstract: We present a statistical fragmentation study of doubly charged alkali (Li, Na, K) and antimony clusters The evaporation of one charged trimer is the most dominant decay channel (asymmetric fission) at low excitation energies For small sodium clusters this was quite early found in molecular dynamical calculations by Landman et al For doubly charged lithium clusters, we predict Li$_{9}^{+}$ to be the preferential dissociation channel As already seen experimentally a more symmetric fission is found for doubly charged antimony clusters This different behavior compared to the alkali metal clusters is in our model essentially due to a larger fissility of antimony This is checked by repeating the calculations for Na$_{52}^{++}$ with a bulk fissility parameter set artificially equal to the value of Sb

On The Low-Frequency Vibrational Modes of C$_{60}$

Abstract: The vibrational spectrum of C$_{60}$ is compared to the spectrum of a classical isotropic elastic spherical shell. We show correlations between the low frequency modes of C$_{60}$ and those of the spherical shell. We find the spherical model gives the approximate frequency ordering for the low frequency modes. We estimate a Poisson ratio of $\sigma\approx 0.30$ and a transverse speed of sound of $v_s\approx 1800$ m/s for the equivalent elastic shell. We also find that $\omega({\rm M_1})/\omega({\rm M_0})=\sqrt{3\over 2}$ for the shell modes ${\rm M_0}$ and ${\rm M_1}$, independent of elastic constants. We find that this ratio compares favorably with an experimental value of 1.17.

Generalized Stacking Fault Energy Surfaces and Dislocation Properties of Silicon: A First-Principles Theoretical Study

Abstract: The generalized stacking fault (GSF) energy surfaces have received considerable attention due to their close relation to the mechanical properties of solids. We present a detailed study of the GSF energy surfaces of silicon within the framework of density functional theory. We have calculated the GSF energy surfaces for the shuffle and glide set of the (111) plane, and that of the (100) plane of silicon, paying particular attention to the effects of the relaxation of atomic coordinates. Based on the calculated GSF energy surfaces and the Peierls-Nabarro model, we obtain estimates for the dislocation profiles, core energies, Peierls energies, and the corresponding stresses for various planar dislocations of silicon.

Offsets and polarization at strained AlN/GaN polar interfaces

Abstract: The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies. Our results confirm the existence of a large forward-backward asymmetry for this interface.

Characterization of the Noise in Secondary Ion Mass Spectrometry Depth Profiles

Abstract: The noise in the depth profiles of secondary ion mass spectrometry (SIMS) is studied using different samples under various experimental conditions. Despite the noise contributions from various parts of the dynamic SIMS process, its overall character agrees very well with the Poissonian rather than the Gaussian distribution in all circumstances. The Poissonian relation between the measured mean-square error (MSE) and mean can be used to describe our data in the range of four orders. The departure from this relation at high counts is analyzed and found to be due to the saturation of the channeltron used. Once saturated, the detector was found to exhibit hysteresis between rising and falling input flux and output counts.

Strong to fragile transition in a model of liquid silica

Abstract: The transport properties of an ionic model for liquid silica at high temperatures and pressure are investigated using molecular dynamics simulations. With increasing pressure, a clear change from "strong" to "fragile" behaviour (according to Angell's classification of glass-forming liquids) is observed, albeit only on the small viscosity range that can be explored in MD simulations.. This change is related to structural changes, from an almost perfect four-fold coordination to an imperfect five or six-fold coordination. (submitted to "Molecular Simulation")

The structure and phase stability of CO adsorbates on Rh(110)

Abstract: The structure of CO adsorbates on the Rh(110) surface is studied at full coverage using first-principles techniques. The relative energies of different adsorbate geometries are determined by means of accurate structure optimizations. In agreement with experiments, we find that a p2mg(2x1) 2CO structure is the most stable. The CO molecules sit on the short-bridge site (carbon below) with the molecular axis slightly tilted off the surface normal, along the (001) direction. Configurations corresponding to different distributions of tilt angles are mapped onto an anisotropic 2D Ising model whose parameters are extracted from our ab-initio calculations. We find that an order-disorder phase-transition occurs at a temperature T_c=350 K.

Thermal and Mechanical Properties of Pt-Rh Alloys

Abstract: We utilize the many-body potentials developed by Sutton and Chen(1990) within the context of the tight-binding approach to study the bulk properties of metals and metal alloys in molecular dynamics (MD) simulations. In the simulations of Pt-Rh alloys we used the MD algorithms based on an extended Hamiltonian formalism from the works of Andersen(1980), Parrinello and Rahman(1980), Nose(1984), Hoover(1985) and Cagin(1988).The simulator program that we use generates information about various physical properties during the run time, along with critical trajectory and stepwise information which need to be analysed post production. The thermodynamical and mechanical properties are calculated using the statistical fluctuation expressions over the MD.

Role of defects and impurities in doping of GaN

Abstract: We have calculated formation energies and position of the defect levels for all native defects and for a variety of donor and acceptor impurities employing first-principles total-energy calculations. An analysis of the numerical results gives direct insight into defect concentrations and impurity solubility with respect to growth parameters (temperature, chemical potentials) and into the mechanisms limiting the doping levels in GaN. We show how compensation and passivation by native defects or impurities, solubility issues, and incorporation of dopants on other sites influence the acceptor doping levels.

Theoretical evidence for efficient p-type doping of GaN using beryllium

Abstract: Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be_3N_2. We show however that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in MOCVD growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at MBE growth temperatures.

The Adsorption of Atomic Nitrogen on Ru(0001): Geometry and Energetics

Abstract: The local adsorption geometries of the (2x2)-N and the (sqrt(3)x sqrt(3))R30^o -N phases on the Ru(0001) surface are determined by analyzing low-energy electron diffraction (LEED) intensity data. For both phases, nitrogen occupies the threefold hcp site. The nitrogen sinks deeply into the top Ru layer resulting in a N-Ru interlayer distance of 1.05 AA and 1.10 AA in the (2x2) and the (sqrt(3)x sqrt(3))R30^o unit cell, respectively. This result is attributed to a strong N binding to the Ru surface (Ru--N bond length = 1.93 AA) in both phases as also evidenced by ab-initio calculations which revealed binding energies of 5.82 eV and 5.59 eV, respectively.

The Equilibrium Shape of Quantum Dots

Abstract: The formation of dislocation-free three-dimensional islands during the heteroepitaxial growth of lattice-mismatched materials has been observed experimentally for several material systems. The equilibrium shape of the islands is governed by the competition between the surface energy and the elastic relaxation energy of the islands as compared to the uniform strained film. As an exemplification we consider the experimentally intensively investigated growth of InAs quantum dots on a GaAs(001) substrate, deriving the equilibrium shape as a function of island volume. For this purpose InAs surface energies have been calculated within density-functional theory, and a continuum approach has been applied to compute the elastic relaxation energies.

Ab initio shallow acceptor levels in gallium nitride

Abstract: Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy $\sim$ 0.06 eV); $Mg_{Ga}$ and $Zn_{Ga}$ are mid-deep acceptors (0.23 eV and 0.33 eV respectively); $Ca_{Ga}$ and $Cd_{Ga}$ are deep acceptors ($\sim$0.65 eV); $Si_N$ is a midgap trap with high formation energy; finally, contrary to recent claims, $C_N$ is a deep acceptor (0.65 eV). Interstitials and heteroantisites are energetically not competitive with substitutional incorporation.

Theory of self-diffusion in GaAs

Abstract: Ab initio molecular dynamics simulations are employed to investigate the dominant migration mechanism of the gallium vacancy in gaas as well as to assess its free energy of formation and the rate constant of gallium self-diffusion. our analysis suggests that the vacancy migrates by second nearest neighbour hops. the calculated self-diffusion constant is in good agreement with the experimental value obtained in ^69 GaAs/ ^71 GaAs isotope heterostructures and at significant variance with that obtained earlier from interdiffusion experiments in GaAlAs/GaAs-heterostructures.

Modeling Acoustic Emission in Microfracturing Phenomena

Abstract: It has been recently observed that synthetic materials subjected to an external elastic stress give rise to scaling phenomena in the acoustic emission signal. Motivated by this experimental finding we develop a mesoscopic model in order to clarify the nature of this phenomenon. We model the synthetic material by an array of resistors with random failure thresholds. The failure of a resistor produces an decrease in the conductivity and a redistribution of the disorder. By increasing the applied voltage the system organizes itself in a stationary state. The acoustic emission signal is associated with the failure events. We find scaling behavior in the amplitude of these events and in the times between different events. The model allows us to study the geometrical and topological properties of the micro-fracturing process that drives the system to the self-organized stationary state.