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Journal ArticleDOI

A reversible optical transition in SeGe and PSeGe glasses

K. Oe, +2 more
- 01 May 1976 - 
- Vol. 20, Iss: 3, pp 405-411
TLDR
In this paper, a reversible optical transition has been found in thin films of SeGe and PSeGe glasses. But the authors did not consider the presence of arsenic in these glasses.
Abstract
A reversible optical transition has been found in thin films of SeGe and PSeGe glasses. This optical transition is similar to that found in AsSeGe and AsSeSGe glass films; heating causes the shift of the absorption edge to shorter wavelengths, and illumination moves it to longer wavelengths without crystallization. It was found that the presence of arsenic is not always necessary. Fundamental optical properties of these glasses, i.e. absorption constant, optical energy gap, change of the optical energy gap, and the refractive index by heating and illumination are reported. Change of the optical energy gap and the refractive index is small in SeGe and PSeGe glasses, compared with that in AsSeGe and AsSeSGe glasses.

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Citations
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Enhanced diffusion mechanisms

TL;DR: In this paper, the phenomenology is reviewed for several enhanced diffusion mechanisms: the normal ionization-enhanced diffusion mechanism, the Bourgoin mechanism, energy-release mechanism and some recoil mechanisms.
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Studies on thin films of lead chalcogenides

TL;DR: In this paper, a good deal of information regarding the synthesis and opto-electro-structural properties of thin films of lead chalcogenides have been revealed.
Journal ArticleDOI

Optical band gap and optical constants in amorphous Se96−xTe4Agx thin films

TL;DR: In this article, the optical constants (absorption coefficient (α), refractive index (n), extinction coefficient (k), real and imaginary part of dielectric constant) have been studied for a-Se96−xTe4Agx (where x = 0, 4, 8, 12) thin films as a function of photon energy in the wavelength range.
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Characterization of vacuum evaporated PbS thin films

TL;DR: In this paper, the optical band gap and optical constants (absorption coefficient, refractive index and extinction coefficient) of polycrystalline thin films of PbS have been determined by absorbance and transmittance measurements using Fourier transform infrared spectrophotometer.
Journal ArticleDOI

Reversible photoinduced changes in the properties of chalcogenide vitreous semiconductors

TL;DR: In this paper, the photostructural transformations of chalcogenide vitreous semiconductors are investigated and a conclusion is reached that these changes result from photostructureural transformations.
References
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Journal ArticleDOI

Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors

TL;DR: In this paper, the phase change from amorphous to crystalline state is not only a thermal phenomenon but is directly influenced by the creation of excess electron-hole carriers by either the light, or, for the electrical device, by the electric field.
Journal ArticleDOI

Hologram Storage in Arsenic Trisulfide Thin Films

TL;DR: In this paper, preliminary results of experiments involving the storage of high efficiency holograms in evaporated thin films of arsenic trisulfide (As2S3) were reported.
Journal ArticleDOI

A reversible optical change in the AsSeGe glass

TL;DR: In this article, a novel reversible change in the optical property, transmission and refractive index, due to light irradiation has been found in the As-Se-Ge glass film, which makes the material suitable for erasable (optical) memory medium.
Journal ArticleDOI

Photoexpansion and ``thermal contraction'' of amorphous chalcogenide glasses

TL;DR: In this article, reversible photodarkening effect of chalcogenide glass films has been observed in the case of As-Se-Se −(S) −Ge glass films.
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