scispace - formally typeset
Journal ArticleDOI

Characterization of vacuum evaporated PbS thin films

Sushil Kumar, +3 more
- 01 Jan 2003 - 
- Vol. 325, pp 8-16
TLDR
In this paper, the optical band gap and optical constants (absorption coefficient, refractive index and extinction coefficient) of polycrystalline thin films of PbS have been determined by absorbance and transmittance measurements using Fourier transform infrared spectrophotometer.
Abstract
The narrow gap lead chalcogenides and related solid solutions have been the materials of considerable technological importance. Their unusual and unique characteristics make them a preferred subject for solid state research and development. The high quality polycrystalline thin films of PbS have been deposited onto ultra-clean glass substrates by vacuum evaporation technique. The as-deposited films were annealed in vacuum at 350 K. The optical, electrical and structural investigations on PbS thin films have been carried out. The optical band gap and optical constants (absorption coefficient, refractive index and extinction coefficient) of the films were determined by absorbance and transmittance measurements using Fourier transform infrared spectrophotometer. The DC conductivity and activation energy of the films were measured in temperature range 300–380 K. The schottky junction of PbS with indium was made and the barrier height and ideality factor were determined using current–voltage characteristics. The sample quality, crystal structure and lattice parameter of the films were determined from X-ray diffraction pattern.

read more

Citations
More filters
Journal ArticleDOI

Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor.

TL;DR: It is remarkable that rational utilization of an intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface realizes symmetric, opposing photoswitching effects, which are effectively mirror images in a single pristine graphene device.
Journal ArticleDOI

Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors

TL;DR: In this article, the authors introduced the recent advances on the materials, synthesis, device fabrication and photodetection mechanism for various of 2D group IVA metal chalcogenides photodets from an overall perspective.
Journal ArticleDOI

Enhancing efficiency and stability of perovskite solar cells via a high mobility p-type PbS buffer layer

TL;DR: In this article, a 200 orientated PbS thin film was applied to organic hole transport materials (HTMs) as buffer layer to improve the stability and performance of perovskite solar cells.
Journal ArticleDOI

Comparative studies on the structural, morphological, optical, and electrical properties of nanocrystalline PbS thin films grown by chemical bath deposition using two different bath compositions

TL;DR: In this article, high quality lead sulfide (PbS) thin films were synthesized by chemical bath deposition from two baths with different compositions, and the structure, morphology, and optical properties of the obtained films were investigated and compared with respect to the deposition time.
References
More filters
Book

Optical Processes in Semiconductors

TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Book

Metal-semiconductor contacts

TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI

Elements of X‐Ray Diffraction

B. D. Cullity, +1 more
- 01 Mar 1957 - 
Book

Thin film phenomena

Related Papers (5)