Journal ArticleDOI
A survey of behavioral modeling of ferroelectric capacitors
Ali Sheikholeslami,P.G. Gulak +1 more
TLDR
The pulse waveform applied to the ferroelectric capacitor in the latter approach resembles the actual waveform encountered in a typical ferro electric memory access, making switching-current based models more suitable for use in high-speed-memory circuit simulations.Abstract:
Six different behavioral models for ferroelectric capacitors are surveyed with an emphasis on their usefulness in the transient circuit simulation of integrated nonvolatile memories. These models can be broadly classified into two categories, namely, those that rely on the hysteresis loop and those that rely on the switching current of a ferroelectric capacitor. The former often involves a continuous cycling of a ferroelectric capacitor with a sinusoidal waveform. The latter employs a pulse measurement technique to capture the switching current of the capacitor. The pulse waveform applied to the ferroelectric capacitor in the latter approach resembles the actual waveform encountered in a typical ferroelectric memory access. This resemblance makes switching-current based models more suitable for use in high-speed-memory circuit simulations.read more
Citations
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Journal ArticleDOI
A survey of circuit innovations in ferroelectric random-access memories
Ali Sheikholeslami,P.G. Gulak +1 more
TL;DR: This paper surveys circuit innovations in ferroelectric memories at three circuit levels: memory cell, sensing and architecture, and reviews nine different architectures for ferro electric memories in terms of speed, density and power consumption.
Journal ArticleDOI
Equivalent circuit and simulations for the Landau-Khalatnikov model of ferroelectric hysteresis
TL;DR: An alternative experimental method for the determination of the coercive field is suggested and the dynamics of bifurcation of a driven Landau-Khalatnikov ferroelectric model is developed.
Proceedings ArticleDOI
A compare-and-write ferroelectric nonvolatile flip-flop for energy-harvesting applications
TL;DR: A novel compare-and-write ferroelectric nonvolatile flip-flop is developed, which can be used in the checkpoint processor for energy-harvesting applications and can make the processornonvolatile, secure and instant recoverable from power failures.
Journal ArticleDOI
Enhanced Energy Density in Core–Shell Ferroelectric Ceramics: Modeling and Practical Conclusions
TL;DR: In this article, a microstructure-level model of the core-shell-structured ferroelectric ceramics was developed through the voronoi tessellation random construction routine.
Journal ArticleDOI
A pulse-based, parallel-element macromodel for ferroelectric capacitors
TL;DR: A pulse-based behavioral model is proposed and implemented in HSPICE and accurately predicts the bitline voltage of a ferroelectric memory testchip.
References
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Journal ArticleDOI
Device modeling of ferroelectric capacitors
TL;DR: In this article, a physically based methodology is developed for modeling the behavior of electrical circuits containing nonideal ferroelectric capacitors, illustrated by modeling the discrete capacitors as a stacked dielectric structure.
Journal ArticleDOI
Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions
TL;DR: In this paper, a general approach for modeling incomplete dipole switching in ferroelectric capacitors is used to derive equations describing the electrical behavior of a simple characterization circuit with arbitrary initial conditions and arbitrary time-dependent applied voltages.
Journal ArticleDOI
Nanosecond switching of thin ferroelectric films
TL;DR: In this article, the switching time for polarization reversal in ferroelectric films of PbZr0.53Ti0.47O3 and La-substituted PbTiO3 has been investigated.
Journal ArticleDOI
Transient modeling of ferroelectric capacitors for nonvolatile memories
Ali Sheikholeslami,P.G. Gulak +1 more
TL;DR: In this article, a behavioral transient model based on pulse measurement results is proposed and implemented as an HSPICE macro-model, which mainly consists of two nonlinear capacitors, corresponding to the two different polarization states of an FE capacitor.
Journal ArticleDOI
Standardized ferroelectric capacitor test methodology for nonvolatile semiconductor memory applications
Steve Bernacki,Larry Jack,Yanina Kisler,Steve Collins,S.D. Bernstein,Rob Hallock,Bruce G. Armstrong,Jerry Shaw,J A Evans,Bruce A. Tuttle,Bill Hammetter,Steve Rogers,Bob Nasby,Jack Henderson,Joe Benedetto,Randy Moore,Cpt Robert Pugh,Al Fennelly +17 more
TL;DR: In this article, the threshold voltage required for 1 μC/cm2 differential pulsed long-term remanent polarization of capacitors is defined, and a suggested set of testing procedures are developed for their standardized measurement.
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