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Journal ArticleDOI

A survey of behavioral modeling of ferroelectric capacitors

TLDR
The pulse waveform applied to the ferroelectric capacitor in the latter approach resembles the actual waveform encountered in a typical ferro electric memory access, making switching-current based models more suitable for use in high-speed-memory circuit simulations.
Abstract
Six different behavioral models for ferroelectric capacitors are surveyed with an emphasis on their usefulness in the transient circuit simulation of integrated nonvolatile memories. These models can be broadly classified into two categories, namely, those that rely on the hysteresis loop and those that rely on the switching current of a ferroelectric capacitor. The former often involves a continuous cycling of a ferroelectric capacitor with a sinusoidal waveform. The latter employs a pulse measurement technique to capture the switching current of the capacitor. The pulse waveform applied to the ferroelectric capacitor in the latter approach resembles the actual waveform encountered in a typical ferroelectric memory access. This resemblance makes switching-current based models more suitable for use in high-speed-memory circuit simulations.

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Citations
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Journal ArticleDOI

A survey of circuit innovations in ferroelectric random-access memories

TL;DR: This paper surveys circuit innovations in ferroelectric memories at three circuit levels: memory cell, sensing and architecture, and reviews nine different architectures for ferro electric memories in terms of speed, density and power consumption.
Journal ArticleDOI

Equivalent circuit and simulations for the Landau-Khalatnikov model of ferroelectric hysteresis

TL;DR: An alternative experimental method for the determination of the coercive field is suggested and the dynamics of bifurcation of a driven Landau-Khalatnikov ferroelectric model is developed.
Proceedings ArticleDOI

A compare-and-write ferroelectric nonvolatile flip-flop for energy-harvesting applications

TL;DR: A novel compare-and-write ferroelectric nonvolatile flip-flop is developed, which can be used in the checkpoint processor for energy-harvesting applications and can make the processornonvolatile, secure and instant recoverable from power failures.
Journal ArticleDOI

Enhanced Energy Density in Core–Shell Ferroelectric Ceramics: Modeling and Practical Conclusions

TL;DR: In this article, a microstructure-level model of the core-shell-structured ferroelectric ceramics was developed through the voronoi tessellation random construction routine.
Journal ArticleDOI

A pulse-based, parallel-element macromodel for ferroelectric capacitors

TL;DR: A pulse-based behavioral model is proposed and implemented in HSPICE and accurately predicts the bitline voltage of a ferroelectric memory testchip.
References
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Journal ArticleDOI

Device modeling of ferroelectric capacitors

TL;DR: In this article, a physically based methodology is developed for modeling the behavior of electrical circuits containing nonideal ferroelectric capacitors, illustrated by modeling the discrete capacitors as a stacked dielectric structure.
Journal ArticleDOI

Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions

TL;DR: In this paper, a general approach for modeling incomplete dipole switching in ferroelectric capacitors is used to derive equations describing the electrical behavior of a simple characterization circuit with arbitrary initial conditions and arbitrary time-dependent applied voltages.
Journal ArticleDOI

Nanosecond switching of thin ferroelectric films

TL;DR: In this article, the switching time for polarization reversal in ferroelectric films of PbZr0.53Ti0.47O3 and La-substituted PbTiO3 has been investigated.
Journal ArticleDOI

Transient modeling of ferroelectric capacitors for nonvolatile memories

TL;DR: In this article, a behavioral transient model based on pulse measurement results is proposed and implemented as an HSPICE macro-model, which mainly consists of two nonlinear capacitors, corresponding to the two different polarization states of an FE capacitor.
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