Journal ArticleDOI
A theoretical treatment of GaAs growth by vapour phase transport for {001} orientation
R. Cadoret,M. Cadoret +1 more
TLDR
In this paper, the normal growth rate of a {001} face has been theoretically studied; by considering either direct fixation of gallium arsenide molecules, or formation of intermediate surface compounds, it appears that experimental results can be interpreted by considering the reactions of desorption of the chlorine atoms adsorbed on surface as limiting the growth.About:
This article is published in Journal of Crystal Growth.The article was published on 1975-12-01. It has received 51 citations till now. The article focuses on the topics: Gallium & Gallium trichloride.read more
Citations
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Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
The fundamentals of chemical vapour deposition
TL;DR: The most important aspects of the chemical vapour deposition process are reviewed; these include deposit structure (with its relation to process parameters), process control through application of the principles of thermodynamics and reaction kinetics, with emphasis on deposit thickness uniformity, deposit composition control and deposit-substrate adherence as mentioned in this paper.
Journal ArticleDOI
Hydride vapor phase epitaxy revisited
Sebastian Lourdudoss,Olle Kjebon +1 more
TL;DR: The salient features of hydride vapor phase epitaxy (HYPE) process in the fabrication of optoelectronic devices are demonstrated by combining the state of the art results of several groups working in this field as discussed by the authors.
References
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Journal ArticleDOI
Vapor pressures and phase equilibria in the GaAs system
TL;DR: In this paper, mass spectrometric and weight loss measurements of the species effusing from a Knudsen cell containing GaAs were used to obtain vapor pressures over the temperature range 900-1200°K.
Journal ArticleDOI
Surface stoichiometry and structure of GaAs
TL;DR: In this paper, a kinetic model involving changes in surface stoichiometry is proposed which gives quantitative agreement with experiment for both desorption rate and surface composition, assuming that As2 is adsorbed in a weakly-bound molecular precursor state from which dissociation into As atoms in As surface sites occurs Recombination of surface As atoms into the molecular state occurs at a rate whose activation energy decreases rapidly with increasing As concentration in the surface
Journal ArticleDOI
The preparation of high purity gallium arsenide by vapour phase epitaxial growth
J.R. Knight,D. Effer,P.R. Evans +2 more
Journal ArticleDOI
Epitaxial GaAs Kinetic Studies: {001} Orientation
TL;DR: In this paper, a recording microbalance was adapted to the deposition apparatus so that the epitaxial growth rates could be continuously measured during the actual deposition process, which may indicate the presence of a competitive adsorption process.