Proceedings ArticleDOI
Accuracy of Thermal Analysis for SiC Power Devices
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TLDR
In this paper, the thermal behavior of SiC power semiconductor packages is analyzed by means of comprehensive FEM simulations, allowing to more precisely determine the error of the temperature estimation based on the square-root-t approximation for SiC Power devices.Abstract:
Thermal analysis of Silicon Carbide (SiC) power semiconductor packages is a crucial design step to ensure highly reliable device performance at elevated temperatures. The square-root-t extrapolation method is widely adopted to approximate the temperature development within the SiC die for short time transients when device temperature measurements cannot be performed. The reduced thermal resistance of the SiC die leads to smaller thermal time constants. Therefore, the approximation of the heat propagation in SiC devices also has to include the die attach. This paper analyzes the thermal behavior of SiC power semiconductor packages by means of comprehensive FEM simulations, allowing to more precisely determine the error of the temperature estimation based on the square-root-t approximation for SiC power devices.read more
Citations
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Journal ArticleDOI
Circuit-Based Electrothermal Modeling of SiC Power Modules With Nonlinear Thermal Models
Salvatore Race,Aron Philipp,Michel Nagel,T. Ziemann,Ivana Kovacevic-Badstuebner,Ulrike Grossner +5 more
TL;DR: In this paper , a step-back-correction technique implemented in a finite-difference-method-based thermal modeling tool is proposed to reduce the computational cost while maintaining a good accuracy of electrothermal (ET) simulations for multichip power modules.
Proceedings ArticleDOI
Design for Reliability of SiC Multichip Power Modules: The Effect of Variability
Salvatore Race,Thomas Ziemann,Ivana Kovacevic-Badstuebner,Roger Stark,Shweta Tiwari,Ulrike Grossner +5 more
TL;DR: In this article, the authors investigated the impact of the temperature-dependent on-state resistance (RSON) variability on the temperature distribution within a half-bridge power module designed in-house.
Proceedings ArticleDOI
Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages
Ivana Kovacevic-Badstuebner,Salvatore Race,T. Ziemann,Shweta Tiwari,Ulrike Grossner,E. Mengotti,Enea Bianda,Joni Jormanainen +7 more
TL;DR: In this paper , the authors present an analysis of power cycling capabilities of two industry-standard packages with silicon carbide power MOSFET dies: the discrete TO-247 package and a base-plate-less power module with silicone gel encapsulation.
Proceedings ArticleDOI
Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages
TL;DR: In this paper , the authors present an analysis of power cycling capabilities of two industry-standard packages with silicon carbide power MOSFET dies: the discrete TO-247 package and a base-plate-less power module with silicone gel encapsulation.
Journal ArticleDOI
Investigation of Transient Two-Stage Thermal Equivalent <i>RC</i> Network of SOI-MOSFETs Using Nano Double-Pulse Measurement
TL;DR: In this paper , the authors obtained the transient two-stage thermal equivalent RC network of SOI MOSFETs by nano double-pulse measurement combined with network identification by deconvolution.
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Proceedings Article
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