Journal ArticleDOI
Alloying reaction in thin nickel films deposited on GaAs
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TLDR
In this paper, the alloying reaction in a thin nickel film deposited on a GaAs substrate was investigated using microprobe Auger spectroscopy, reflection high energy electron diffraction and transmission electron diffusion.About:
This article is published in Thin Solid Films.The article was published on 1980-07-15. It has received 97 citations till now. The article focuses on the topics: Nickel & Electron diffraction.read more
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The structure and properties of metal-semiconductor interfaces
TL;DR: In this article, the contributions of surface science research to the understanding of metal-semiconductor interfaces are surveyed and a wide range of ultra-high vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of MSS interfaces.
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Development of refractory ohmic contact materials for gallium arsenide compound semiconductors
TL;DR: In this article, the authors developed low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found that the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance Ohmic contact formation.
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Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs
TL;DR: In this article, a cross-sectional transmission electron microscopy was used to explore the uniformity at the metal/GaAs interface and the thermal stability of the AuNiGe contact after the ohmic contact formation.
Journal ArticleDOI
Stable and epitaxial metal/III-V semiconductor heterostructures
Timothy D. Sands,Chris Palmstrom,J. P. Harbison,V. G. Keramidas,N. Tabatabaie,T.L. Cheeks,Ramamoorthy Ramesh,Yaron Silberberg +7 more
TL;DR: In this paper, a review of the criteria that must be met for the fabrication of metal/III-V heterostructures is presented, highlighting the relationship between symmetry differences and defects.
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Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies
TL;DR: In this article, the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480°C were investigated by applying high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x-rays in the scanning TEM and Rutherford backscattering spectrometry.
References
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Metal-semiconductor contacts for GaAs bulk effect devices
TL;DR: An alloy of Au, Ge and Ni has been shown to produce uniform linear electrical contacts to GaAs over a resistivity range useful for bulk effect devices as discussed by the authors, and the preparation of the contact materials, surface treatment of the GaAs, and device fabrication procedures are described.
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Effect of alloying behavior on the electrical characteristics of n‐GaAs Schottky diodes metallized with W, Au, and Pt
A. K. Sinha,J. M. Poate +1 more
TL;DR: In this article, it was shown that the W/GaAs interface of simulated diodes does not exhibit any evidence of interdiffusion or reaction, and the PtAs2/n-GaAs interfaces are associated with a slightly higher barrier height φB [inverted lazy s] 0.89 V than that found for the Pt/n•GaA interface (φB 0.6 V and increasing the ideality parameter n from 1.0 to 1.2).
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Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs
TL;DR: In this paper, an experimental study of the alloying characteristics of a composite thin-film structure which is often used as an ohmic contact to GaAs is presented, and the specific contact resistance of the Ni/AuGe/GaAs system is measured for a wide range of alloy temperatures and times.
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Alloying behavior of Ni/Au‐Ge films on GaAs
TL;DR: In this article, a microprobe Auger spectrometer and an x-ray diffractometer were used to investigate the alloying behavior of thin Ni/Au-Ge films on a GaAs substrate.