Book ChapterDOI
An Analogue of Mott Transition in Compensated GaAs
B. M. Vul
- pp 1085-1093
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In this paper, the conductivity of compensated GaAs with Nd≈Na≈ ≈ 2.101 7 cm-3 was investigated down to T = 0,5°K.Abstract:
The conductivity of compensated GaAs with Nd≈Na≈ ≈2.5.101 7 cm-3 was investigated down to T = 0,5°K. To explain the results of the measurements it was suggested that the electrons at low temperature are localized in a narrow continuum of states near the bottom of the conduction band. At the appropriate concentration of the electrons a Mott transition occurs.read more
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Book ChapterDOI
The Study of Disordered Semiconductors by Compensation
TL;DR: In this paper, the authors summarize the benefits of compensated semiconductors in such studies, review selected past applications of the techniques, and point to some likely areas in which further use of compensation appears promising.
References
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Absence of Diffusion in Certain Random Lattices
TL;DR: In this article, a simple model for spin diffusion or conduction in the "impurity band" is presented, which involves transport in a lattice which is in some sense random, and in them diffusion is expected to take place via quantum jumps between localized sites.
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TL;DR: In this paper, the collective electron and London-Heitler models are not to be regarded as different approximations to the same exact wave function for solids in which, according to the former model, there is a partially filled zone of energy levels.
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Journal ArticleDOI
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TL;DR: In this article, the authors discuss the role of disordered structures in the evolution of the electron in disordered structure and propose a method to find disordered electron structures in a graph.
Journal ArticleDOI
Semiconductor-to-Metal Transition in n -Type Group IV Semiconductors
TL;DR: In this paper, a synthesis of the most significant experimental features of the semiconductor-to-metal transition in group IV semiconductors is given, and two characteristic concentrations are discussed, the first being for a delocalization of electrons (the "Mott" transition), and the second being associated with the entry of the Fermi level into the conduction band of the host material.