Patent
An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask
TLDR
In this article, the use of a mask in the manufacture of a solid state device allows a single exposure of a resist layer 63 to form a proximity effect corrected image of the mask pattern 2, 3 of apertures 3 and masking areas 2 and a modifying layer 4.Abstract:
The mask part 41 includes a substrate 1, a patterning means 40 and a photoemissive layer 6. The patterning means 40 includes a mask pattern 2, 3 of apertures 3 and masking areas 2 and a modifying layer 4. Ultraviolet radiation 56 is patterned by patterning means 40 before effecting electron emission 60 from the photoemissive layer 6. There is electron emission from over the apertures 3 and the masking areas 2 as the masking areas are partially transparent to incident ultraviolet radiation. The ultraviolet transmitted by the apertures and the masking areas is modified in intensity dependent on the thickness R of the modifying layer. The resuting electron emission 60 is in a patterned beam which forms a proximity effect corrected electron image of the mask pattern in the electron sensitive resist layer 63. The masking areas 2 of chromium and the modifying layer 4 of resist may be made by modifications of known methods of chromium deposition and resist exposure and development. The use of the mask in the manufacture of a solid state device allows a single exposure of a resist layer 63 to form a proximity effect corrected image of the mask pattern 2, 3 in the resist layer 63.read more
Citations
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Single pass compensation for electron beam proximity effect
Geraint Owen,Hua-yu Liu +1 more
TL;DR: In this paper, a method for compensation for the proximity effect in electron beam lithography on an e-beam resist material is proposed, where the exposed surface is subdivided into nonoverlapping pixels of approximately equal area.
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An electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
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References
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Patent
Method of compensating the proximity effect in electron beam projection systems
TL;DR: In this paper, a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process is discontinued prematurely.
Patent
Microminiature solid state device manufacture with automatic alignment of sub-patterns
TL;DR: In this paper, a semiconductor substrate is mounted in an electron beam image projector with a mask, and the patterned electron beam from the mask comprises a first sub-pattern and a second lower intensity subpattern.
Journal ArticleDOI
High Resolution Photomasks with Ion‐Bombarded Polymethyl Methacrylate Masking Medium
Patent
Electron image projection masks
TL;DR: An electron image projection mask consisting of an optical mask comprising a transparent substrate, bearing an opaque mask pattern disposed on the substrate, a transparent coating extending over the mask pattern and the areas of the substrate exposed through the apertures in the opaque mask patterns, and a metal image extended over the transparent coating is described in this paper.
Journal ArticleDOI
Proximity corrections for electron image projection
K H Nicholas,R A Ford,R W Wilks +2 more
TL;DR: The Electron Image Projector (EIP) as discussed by the authors is capable of reproducing patterns with dimensions less than one quarter of a micron over a 4-inch slice, but there was some concern over short range proximity effects.