Journal ArticleDOI
An integral charge control model of bipolar transistors
H.K. Gummel,H. C. Poon +1 more
TLDR
A compact model of bipolar transistors suitable for network analysis computer programs is presented, through the use of a new charge control relation linking junction voltages, collector current, and base charge, which substantially exceeds that of existing models of comparable complexity.Abstract:
We present in this paper a compact model of bipolar transistors, suitable for network analysis computer programs. Through the use of a new charge control relation linking junction voltages, collector current, and base charge, the model includes high injection effects. The performance substantially exceeds that of existing models of comparable complexity. For low bias and with some additional idealization, the model reduces to the conventional Ebers-Moll model.read more
Citations
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Book
ESD in silicon integrated circuits
TL;DR: ESD Phenomena and Test Methods The Physics of ESD Protection Circuit Elements Requirements and Synthesis of ESD Protection Circuits Design and Layout Requirements Analysis and Case Studies Modelling of ESC in Integrated Circuits Effects of Processing and Packaging.
Journal ArticleDOI
Analysis of nonlinear systems with multiple inputs
TL;DR: Analytical modeling of communication receivers to account for their nonlinear response to multiple input signals is discussed, based on the application of the Wiener-Volterra analysis of nonlinear functionals.
Book
Intermodulation Distortion in Microwave and Wireless Circuits
TL;DR: In conclusion, signal pertubation IMD characterization techniques nonlinear analysis techniques non linear device modelling highly linear circuit design and nonlinear device modelling techniques are introduced.
Journal ArticleDOI
Synthesis of high-performance analog circuits in ASTRX/OBLX
TL;DR: A new synthesis strategy that can automate fully the path from an analog circuit topology and performance specifications to a sized circuit schematic and relies on asymptotic waveform evaluation to predict circuit performance and simulated annealing to solve a novel unconstrained optimization formulation of the circuit synthesis problem is presented.
Journal ArticleDOI
Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
TL;DR: In this paper, the Moll and Ross integral relations for the current flow through the base region of a bipolar transistor and for the base transit time were generalized to the case of a heterostructure bipolar transistor with a nonuniform energy gap.
References
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Journal ArticleDOI
Large-signal analysis of a silicon Read diode oscillator
D.L. Scharfetter,H.K. Gummel +1 more
TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
Journal ArticleDOI
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.
Journal ArticleDOI
A self-consistent iterative scheme for one-dimensional steady state transistor calculations
TL;DR: In this paper, a self-consistent iterative scheme for the numerical calculation of dc potentials and currents in a one-dimensional transistor model is presented, where boundary conditions are applied only at points representing contacts.
Journal ArticleDOI
A theory of transistor cutoff frequency (f T ) falloff at high current densities
TL;DR: In this paper, it was shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities.
Journal ArticleDOI
Large-Signal Behavior of Junction Transistors
J. J. Ebers,John L. Moll +1 more
TL;DR: In this paper, a generalized two-terminal-pair theory of junction transistors is presented which is applicable, on a dc basis, in all regions of operation, and the transition of the transistor switch from open to closed, or vice versa, is discussed, including the effects of minority carrier storage.