Open AccessBook
ESD in silicon integrated circuits
TLDR
ESD Phenomena and Test Methods The Physics of ESD Protection Circuit Elements Requirements and Synthesis of ESD Protection Circuits Design and Layout Requirements Analysis and Case Studies Modelling of ESC in Integrated Circuits Effects of Processing and Packaging.Abstract:
ESD Phenomena and Test Methods The Physics of ESD Protection Circuit Elements Requirements and Synthesis of ESD Protection Circuits Design and Layout Requirements Analysis and Case Studies Modelling of ESD in Integrated Circuits Effects of Processing and Packaging.read more
Citations
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Journal ArticleDOI
Energy dissipation and transport in nanoscale devices
TL;DR: In this article, the authors present recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures, including silicon transistors, carbon nanostructures, and semiconductor nanowires.
Journal ArticleDOI
Energy Dissipation and Transport in Nanoscale Devices
TL;DR: In this article, the authors present recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures, including silicon transistors, carbon nanostructures, and semiconductor nanowires.
Journal ArticleDOI
Parasitic charging of dielectric surfaces in capacitive microelectromechanical systems (MEMS)
TL;DR: In this article, the surface charge accumulation on the electrode passivation of silicon cantilever actuators has been observed, and charge decay characteristics were recorded for a silicon oxide passivation and a multilayer passivation by silicon oxide and silicon nitride.
Journal ArticleDOI
A Wireless Power Interface for Rechargeable Battery Operated Medical Implants
Pengfei Li,Rizwan Bashirullah +1 more
TL;DR: This brief presents a highly integrated wirelessly powered battery charging circuit for miniature lithium (Li)-ion rechargeable batteries used in medical implant applications that employs a new control loop that relaxes comparator resolution requirements, provides simultaneous operation of constant-current and constant-voltage loops, and eliminates the external current sense resistor from the charging path.
Journal ArticleDOI
TLP calibration, correlation, standards, and new techniques
TL;DR: In this article, a constant impedance transmission line pulse (TLP) system with new measurement capabilities and improved accuracy is described, and a calibration method and standard TLP test method are presented for adaptation by the industry.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
Deformation Potentials and Mobilities in Non-Polar Crystals
John Bardeen,William Shockley +1 more
TL;DR: In this article, the authors used the method of effective mass, extended to apply to gradual shifts in energy bands resulting from deformations of the crystal lattice, to estimate the interaction between electrons of thermal energy and the acoustical modes of vibration.
Journal ArticleDOI
Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Book
Device electronics for integrated circuits
TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
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