Journal ArticleDOI
An investigation of the roughening of silicon(100) surfaces in Cl2 reactive ion etching plasmas by in situ ellipsometry and quadrupole mass spectrometry
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In this paper, the conditions which cause silicon roughening in Cl2 RIE plasmas are investigated, and the authors suggest that hydroxyl (SiOH) groups are more likely masking species.Abstract:
The conditions which cause silicon roughening in Cl2 RIE plasmas are investigated. I n s i t uellipsometry provides a quantitative interpretation of the extent and nature of the roughening process, while mass spectrometry yields complementary information regarding the composition of the plasma. The degree of roughening is reproducible when base pressures are ≊10−5 Torr but is strongly dependent on the rf power and process pressure. Careful selection of these parameters (50 W, 100 mTorr) retains a smooth siliconsurface and gradually smooths those which have been roughened. Water vapor has a very significant effect on the etching reactions. In low concentrations it induces roughening and in high concentrations it prevents any etching of silicon. We suggest that silicon oxide micromasks are not responsible for roughening. Instead we propose that hydroxyl (SiOH) groups are the more likely masking species. Roughening of silicon is efficiently prevented when the wafer is patterned with positive photoresist. It is possible that CCl x (x=1–4) species can remove the micromasks to retain a smooth surface.read more
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Surface science aspects of etching reactions
Harold F. Winters,J. W. Coburn +1 more
TL;DR: A review of the work reported using the first of these approaches only and summarizes the status of this virtually unexplored field of surface chemistry can be found in this article, where a considerable quantity of new unpublished data is presented and a framework is proposed to explain the many observations associated with the spontaneous reaction of fluorine with silicon.
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Process Analytical Chemistry
TL;DR: The purpose of this report is to acquaint the reader with the important technological, methodological, and chemometric advances that are making possible a major revolution in this field.
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Silicon roughness induced by plasma etching
Richard Petri,Pascal Brault,Olivier Vatel,Daniel Henry,Elie André,Philippe Dumas,Franck Salvan +6 more
TL;DR: In this paper, a parametric study of single-crystal silicon roughness induced by an SF6 plasma has been carried out by means of atomic force microscopy, showing the combined role of both ionic and neutral species.
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Sidewall surface chemistry in directional etching processes
TL;DR: A review of the approaches that have been used for silicon, aluminum, SiO2 and polymeric materials to suppress etching reactions at microstructure sidewalls is presented in this article.
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Surface roughness generated by plasma etching processes of silicon
Mickael Martin,G. Cunge +1 more
TL;DR: In this article, the authors used atomic force microscopy to analyze the roughness generated on c-Si (100) surfaces when etched in high-density plasmas over a wide range of conditions (pressure, rf power) using SF6, CF4, Cl2, and HBr chemistries.