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Proceedings ArticleDOI

Analysis of the Universal Gates based on the Comparative Factors of Delay Propagation, Average Power Dissipation and Logical Effort

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TLDR
In this paper, a comparative analysis of the universal logic gates has been carried out, based on the parameters of delay, Fan-out and power consumption, and the simulation results are in agreement to the literature presented regarding the logical effort of the gates.
Abstract
This paper illustrates the practical/working difference between the universal logic gates- NAND & NOR. The comparative analysis of the universal gates has been carried out, based on the parameters of delay, Fan-out and power consumption. The design and simulations are performed using Cadence Virtuoso tool in 45nm CMOS technology. The simulation results are in agreement to the literature presented regarding the logical effort of the gates. Here, the power dissipation and the delay calculations lead to conclusive results which are extensively discussed in this paper. The comparative assessment implemented for the gates is performed with same technology and same circuit designing techniques. Further, this work provides a decisive comment on- which amongst the two universal gates is more efficient for CMOS design.

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References
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Logical Effort: Designing Fast CMOS Circuits

TL;DR: In this article, the authors derived the method of logical effort from design examples and calculated the logical effort of gates, and then calibrated the model to achieve equal rising and falling delays.
Journal ArticleDOI

Performance Analysis of a Low-Power High-Speed Hybrid 1-bit Full Adder Circuit

TL;DR: In this paper, a hybrid 1-bit full adder design employing both complementary metal-oxide-semiconductor (CMOS) logic and transmission gate logic is reported and is found to offer significant improvement in terms of power and speed.
Proceedings ArticleDOI

Subthreshold logical effort: a systematic framework for optimal subthreshold device sizing

TL;DR: This paper derives a closed-form solution for the correct sizing of transistors in a stack, both in relation to other transistor in the stack, and to a single transistor with equivalent current drivability.
Proceedings ArticleDOI

Impact of process variability on universal gates

TL;DR: Comparisons of the results show that process variations become important in deep sub micron regime and increase the uncertainity in speed.