Proceedings ArticleDOI
β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3 potential for next generation of power devices
TLDR
In this article, the potential of β-Ga2O3 for high-power devices with higher breakdown voltage than GaN and SiC counterparts is discussed, as well as the first transistors (MESFET and MOSFET) are indicated.Abstract:
β-Ga2O3 is the most transparent conductive oxide, well known since several decades for its large bandgap of 4.8 eV. Its potential as semiconductor material, however, is just emerging in recent years. Present work shows the development of βGa2O3 for semiconductor applications and its current state-of-the-art. The discussion is focused on three different aspects: (1) Advantageous growth from melt of large-size β-Ga2O3single-crystals. High-crystalline quality and carrier control make possible the production of conductive and semi-insulating wafers. (2) β-Ga2O3as substrate for homoepitaxy as well as for heteroepitaxial deposition of GaN-based devices. High-brightness blue-LEDs with vertical current injection are demonstrated. (3) Potential of β-Ga2O3for high-power devices with higher breakdown voltage than GaN and SiC counterparts. The first Schottky barrier diode is shown, as well as first transistors (MESFET and MOSFET) are indicated.
Single-crystal phosphors are introduced as novel alternative to currently used powder phosphors. In connection with high-brightness white light-sources, based on LEDs or LDs plus phosphor converters, single-crystal phosphors possess advantageous features. These avoid the use of resins and exhibit a very high internal quantum efficiency, which remains stable with the temperature increase.read more
Citations
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Journal ArticleDOI
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
TL;DR: In this paper, the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and the chemistry of defects and impurity doping is provided.
Patent
Light Emitting Device
TL;DR: By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organics layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathodes, and transmission of the injected electrons can also be performed with good efficiency as discussed by the authors.
Journal ArticleDOI
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
TL;DR: In this paper, a new approach to β-Ga 2 O 3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β -Ga 2 o 3 melting temperature and investigating the effects of crucible composition and shape.
Journal ArticleDOI
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
Yuichi Oshima,Encarnación G. Víllora,Yoshitaka Matsushita,Satoshi Yamamoto,Kiyoshi Shimamura +4 more
TL;DR: In this paper, phase-pure e-Ga2O3 (0001) films are epitaxially grown on three kinds of substrates, although some minor misoriented domains are observed.
Journal ArticleDOI
Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates
TL;DR: In this paper, the halide vapor phase epitaxy of α-Ga2O3 was demonstrated for the first time and the films were twin-free and heteroepitaxially grown on sapphire (0001) substrates using gallium chloride and oxygen as precursors.
References
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Journal ArticleDOI
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Journal ArticleDOI
Deep-ultraviolet transparent conductive β-Ga2O3 thin films
TL;DR: In this article, β-Ga2O3 with an energy band gap of 4.9 eV was prepared on silica glass substrates by a pulsed-laser deposition method, and the resulting internal transmittance at the wavelength (248 nm) of the KrF excimer laser exceeded 50% for the 100-nm-thick film.
Journal ArticleDOI
Crystal Structure of β‐Ga2O3
TL;DR: The crystal structure of β•Ga2O3 has been determined from single-crystal 3D x-ray diffraction data as mentioned in this paper, and the most probable space group to which the crystal belongs is C2h3-C2/m.
Journal ArticleDOI
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki,Kohei Sasaki,Takafumi Kamimura,Man Hoi Wong,Daivasigamani Krishnamurthy,Akito Kuramata,Takekazu Masui,S. Yamakoshi +7 more
TL;DR: In this article, single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field effect transistors were fabricated on a semi-insulating β-Ga 2O3 (010) substrate.
Journal ArticleDOI
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
TL;DR: In this article, β-Ga2O3 single crystals were grown by the floating zone method and their conductivity along the b axis was controlled from <10−9 to 38 Ω−1 1 cm−1 by changing the growth atmosphere.