Journal ArticleDOI
Blistering effects in argon‐bombarded silicon
Klaus Wittmaack,W. Wach +1 more
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In this article, the effects of argon bombardment on silicon are interpreted as argon agglomeration, build-up of critical argon pressures, argon release from near surface regions, and sputtering.Abstract:
Blistering of silicon due to argon bombardment has been observed at implantation energies above about 100 keV. Above about 200 keV rupture of blisters becomes the predominant surface damage phenomenon. Blistering effects are most obvious upon first appearance. Further bombardment causes the occurrence of new generations of blisters accompanied by oscillations in argon content of the silicon backing. The effects are interpreted in terms of argon agglomeration, build‐up of critical argon pressures, argon release from near‐surface regions, and sputtering.read more
Citations
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Journal ArticleDOI
An accurate semi‐empirical equation for sputtering yields I: for argon ions
TL;DR: In this paper, an analysis has been made of the historical data for argon ion sputtering yields of 28 mono-elemental solids in the energy range 250-10 000 eV to develop an improved semi-empirical formula based on Matsunami et al. and Yamamura and Tawara's formulations.
Journal ArticleDOI
Energy and fluence dependence of the sputtering yield of silicon bombarded with argon and xenon
P. Blank,Klaus Wittmaack +1 more
TL;DR: Using the quartz oscillator technique, the authors measured the sputtering yield of silicon bombarded with 10-140-keV argon and 10-540-kV xenon, respectively.
Journal ArticleDOI
An accurate semi-empirical equation for sputtering yields, II: for neon, argon and xenon ions
TL;DR: In this paper, a semi-empirical approach for the sputtering yields of mono-elemental solids, using 250-10,000 eV ions incident normally on the surface, has been developed.
Journal ArticleDOI
High fluence retention of noble gases implanted in silicon
Klaus Wittmaack,P. Blank,W. Wach +2 more
TL;DR: Argon and xenon retention in silicon has been studied at implantation energies between 10 and 500 keV as mentioned in this paper, and the implantation distributions were determined by Rutherford backscattering.
References
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Journal ArticleDOI
Role of integrated lateral stress in surface deformation of He‐implanted surfaces
E. P. EerNisse,S. T. Picraux +1 more
TL;DR: In this paper, the first measurements of integrated lateral stress S have been obtained for He implantations to fluences where surface deformation occurs, and a model to describe the blistering phenomenon is developed based on the standard elastic stability equation for a plate subjected to inplane forces.
Journal ArticleDOI
Model calculation of ion collection in the presence of sputtering
F. Schulz,K. Wittmaack +1 more
TL;DR: In this paper, a zero order approximation of ion collection during sputtering is presented, and the accumulation of implantation profiles and the build-up of surface concentrations and collected quantities are described in detail for Gaussian range distributions.
Journal ArticleDOI
Hydrogen implantation in silicon between 1.5 and 60 kev
E. Ligeon,A. Guivarc'h +1 more
TL;DR: In this paper, the authors used the 1793 keV resonance of the 1H(11B, : alpha;)αα reaction and of the He+ channelled backscattering to determine various parameters about hydrogen implantation in silicon in the low energy range from 1.5 to 60 keV.
Journal ArticleDOI
Surface stresses in ion−implanted steel
TL;DR: In this article, a capacitance probe was used to detect the deflection occurring during ion implantation of thin specimens of annealed steel, which is related to the introduction of a surface compressive stress.
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