Proceedings ArticleDOI
Broadband thermoelectric microwave power sensors using GaAs foundry process
A. Dehe,K. Fricke-Neuderth,Viktor Krozer +2 more
- Vol. 3, pp 1829-1832
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TLDR
In this article, the first demonstration of an integrated MMIC compatible thermoelectric microwave power sensor for frequencies between 1 to 20 GHz using a standard GaAs foundry process is presented.Abstract:
The paper presents the first demonstration of an integrated MMIC compatible thermoelectric microwave power sensor for frequencies between 1 to 20 GHz using a standard GaAs foundry process. Two different types of sensors are described: an insertion sensor for the measurement of transmitted power through a coplanar waveguide and a termination sensor which measures the power dissipated in a 50 /spl Omega/ load. The transmission sensor has a very low insertion loss of less than 0.3 dB and VSWR lower than 1.2. Due to their low time constant of approximately 1 /spl mu/s, these sensors are well suited for pulsed applications. The sensor exhibits an inherent linearity for large power levels and does not require any bias.read more
Citations
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Journal ArticleDOI
A Micromachined Inline-Type Wideband Microwave Power Sensor Based on GaAs MMIC Technology
TL;DR: In this paper, a wideband 8-12-GHz inline-type microwave power sensor based on measuring the microwave power coupled from the coplanar waveguide line by a microelectromechanical system membrane is presented.
Journal ArticleDOI
Fabrication of the Differential Microwave Power Sensor by Seesaw-Type MEMS Membrane
TL;DR: In this paper, a differential capacitive power sensor based on the seesaw-type microelectromechanical systems (MEMS) membrane is proposed, where the center part of the membrane is pulled down toward to the substrate, while the end parts are turned away from the substrate.
Journal ArticleDOI
A coupling RF MEMS power sensor based on GaAs MMIC technology
TL;DR: In this article, an impedance matching structure and a capacitance compensating structure are proposed to improve microwave characteristics and the frequency response of the output at X-band, and the design of the power sensor with the improved structures has resulted in the measured reflection loss of the sensor less than −17−dB, the insertion loss less than 0.8−dB and the flatness of frequency response at Xband.
Journal ArticleDOI
A Thermocouple-Based Self-Heating RF Power Sensor With GaAs MMIC-Compatible Micromachining Technology
Zhiqiang Zhang,Xiaoping Liao +1 more
TL;DR: In this paper, a self-heating RF power sensor using a gradient coplanar waveguide design and a substrate micromachining technique is presented to increase the sensitivity of the power sensor.
Journal ArticleDOI
A microwave power sensor based on GaAs MMIC technology
TL;DR: In this paper, a novel structure for measuring the power of microwave signals is presented, which measures the microwave power coupled from the CPW line by a MEMS membrane, which is compatible with the GaAs MMIC process.
References
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Journal ArticleDOI
High-sensitivity microwave power sensor for GaAs-MMIC implementation
TL;DR: In this paper, a thermoelectric microwave power sensor in a terminating load configuration is presented, which can be used in the millimetre-wave regime and has a thermal time constant of 500 /spl mu/s.
Journal ArticleDOI
Thermoelectric AC power sensor by CMOS technology
D. Jaeggi,Henry Baltes,D. Moser +2 more
TL;DR: In this article, a thermoelectric AC power sensor (thermoconverter) realized by industrial CMOS IC technology in combination with postprocessing micromachining is presented.
Journal ArticleDOI
Integrated microwave power sensor
TL;DR: In this article, a new MMIC compatible sensor that measures RF power transmitted over a 50 /spl Omega/ coplanar waveguide is presented, based on the thermoelectric effect in AlGaAs and GaAs/AlGaAs micromachining technology is used for realisation.
Proceedings ArticleDOI
GaAs monolithic integrated microwave power sensor in coplanar waveguide technology
TL;DR: In this paper, the authors present the fabrication technology, theoretical and experimental results of a novel MMIC compatible broadband power sensor with a 50 /spl Omega/ coplanar waveguide design, integrated AlGaAs thermoelectric sensor and GaAs bulk micromachined membrane for increased sensitivity.
Journal ArticleDOI
Monolithic GaAs MESFET power sensor microsystem
TL;DR: In this article, the authors present the principle, technology and properties of a power sensor microsystem designed for very precise power measurement in a broad frequency range, which was implemented using bulk micromachining technology on GaAs.