Journal ArticleDOI
Chemical Approach to Nanofabrication: Modifications of Silicon Surfaces Patterned by Scanning Probe Anodization
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TLDR
In this paper, the area selectivities arose from the difference in surface chemical reactivities between anodic SiO x and the surrounding Si-H surfaces, and were used for patterning of hydrogen-terminated silicon surfaces.Abstract:
Scanning probe microscope-induced local oxidation of a material surface with adsorbed water is a recent nanolithographic technology. We applied this technique to the nanoscale patterning of hydrogen-terminated silicon (Si-H) surfaces. Using the silicon oxide (SiO x ) patterns as masking, examples of two types of pattern transfer method through area-selective chemical modification were demonstrated. Nanostructures of substrate Si or deposited gold were fabricated by wet chemical etching or electroless plating, respectively. These area selectivities arose from the difference in surface chemical reactivities between anodic SiO x and the surrounding Si-H. The oxidation chemistry is discussed in terms of anodization.read more
Citations
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Evaluation of size effect on mechanical properties of single crystal silicon by nanoscale bending test using AFM
TL;DR: In this paper, a nanometer-scale bending test for a single crystal silicon (Si) fixed beam using an atomic force microscope (AFM) was described. But the authors focused on revealing the size effect on the mechanical property of Si beams ranging from a nano-to millimeter scale.
Journal ArticleDOI
Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges
TL;DR: In this article, the formation of a water bridge between two surfaces separated by a gap of a few nanometers is driven by the application of an electrical field, and its length and neck diameter can be modified by changing the tip-sample separation.
Journal ArticleDOI
Nano-oxidation of silicon surfaces: Comparison of noncontact and contact atomic-force microscopy methods
M. J. Tello,Ricardo Garcia +1 more
TL;DR: In this paper, a comparative study of contact and non-contact atomic-force microscopy (AFM) oxidation experiments was performed, and the comparison of height and width dependencies on voltage and pulse duration allowed establishing noncontact AFM as the optimum local oxidation method.
Plastic Deformation of Nanomertric Single Crystal Silicon Wire in AFM Bending Test at Intermediate Temperatures
TL;DR: In this paper, the authors focused on revealing specimen size and temperature effects on mechanical properties of nanometric single crystal silicon (SCS) wires at intermediate temperatures by bending tests with an atomic force microscope (AFM).
Journal ArticleDOI
Plastic deformation of nanometric single crystal silicon wire in AFM bending test at intermediate temperatures
TL;DR: In this article, the authors focused on revealing specimen size and temperature effects on mechanical properties of nanometric single crystal silicon (SCS) wires at intermediate temperatures by bending tests with an atomic force microscope (AFM).
References
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Thin Film Processes
TL;DR: In this article, the authors discuss the formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (PLVD) and its application in solvent-gel coatings.
Journal ArticleDOI
Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air
TL;DR: In this paper, the chemical modification of hydrogen-passivated n-Si surfaces by a scanning tunneling microscope (STM) operating in air is reported, and the modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time-of-flight secondary ion mass spectrometry (TOF SIMS), and chemical etch/Nomarski microscopy.
Journal ArticleDOI
Nanofabrication Of Titanium Surface By Tip-Induced Anodization In Scanning Tunneling Microscopy
TL;DR: In this article, a titanium (Ti) surface was arbitrarily oxidized by a scanning tunneling microscope (STM) tip with the sample bias of more than +3 V and a dot or line pattern of oxide was fabricated on Ti with the spatial resolution of 70 nm.