Proceedings ArticleDOI
Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology
Fabian Thome,Hermann Massler,Sandrine Wagner,Arnulf Leuther,Ingmar Kallfass,Michael Schlechtweg,Oliver Ambacher +6 more
- pp 1-4
TLDR
In this paper, two millimeter-wave monolithic integrated circuit (MMIC) low-noise amplifiers (LNA), operating in the frequency range between 58 and 110 GHz and 74 and 110GHz, respectively, are presented.Abstract:
Two millimeter-wave monolithic integrated circuit (MMIC) low-noise amplifiers (LNA), operating in the frequency range between 58 and 110 GHz and 74 and 110 GHz, respectively, are presented. The W-band amplifiers employ a three-stage design in a 50nm InGaAs mHEMT technology and were optimized for minimum DC power consumption, using 2×10 and 2×5 μm transistors. For optimum bias conditions the first amplifier achieved a linear gain of more than 16.4dB and a noise figure of less than 2.8 dB over the whole W-band, whereas the second amplifier operates in the frequency range between 80 to 110 GHz with a linear gain of over 14.5 dB and a noise figure of less than 3.3 dB. The best achieved noise figure is 2.1dB and the maximum gain is about 23dB. LNA 1 yields a noise figure of 3 dB and a gain of 8.9dB at an operation frequency of 106 GHz, whilst only consuming 0.9mW of DC power.read more
Citations
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Journal ArticleDOI
Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz
Fabian Thome,Oliver Ambacher +1 more
TL;DR: In this paper, an analysis of the well-established SPDT switch topology is done to achieve wideband performance and high isolation simultaneously, using a standard technology parameter ($R_{\mathrm{\scriptscriptstyle ON}}$ ), which allows a performance estimation of switch MMICs before a wafer run and can support the design of mmW switches.
Journal ArticleDOI
Broadband MMIC LNAs for ALMA Band 2+3 With Noise Temperature Below 28 K
D. Cuadrado-Calle,Danielle George,Gary A. Fuller,Kieran Cleary,Lorene Samoska,Pekka Kangaslahti,Jacob Kooi,Mary Soria,Mikko Varonen,R. Lai,Xiaobing Mei +10 more
TL;DR: In this article, the authors present the design, implementation, and characterization of low-noise amplifiers (LNAs) suitable for operation in the Atacama Large Millimeter and Submillimeter Array (ALMA) band 2.
Proceedings ArticleDOI
A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance
P.M. Smith,M. Ashman,Dong Xu,Xiaoping Yang,Carl Creamer,P.C. Chao,Kanin Chu,K. H. Duh,Christopher Koh,James Schellenberg +9 more
TL;DR: In this article, a 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance is reported, which exhibits on-wafer noise figure (NF) as low as 1.6dB with 25dB gain at 80GHz, and also shows unprecedented wideband performance, with 20dB minimum gain across the 30-100GHz band and NF <;2.5dB over the 43-90GHz band.
Journal ArticleDOI
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
J. Ajayan,D. Nirmal,P. Mohankumar,Dheena Kuriyan,A. S. Augustine Fletcher,L. Arivazhagan,B. Santhosh Kumar +6 more
TL;DR: This review article critically and systematically analyzes the fabrication challenges, reliability issues and their use in cryogenic fields and carefully examines the utility of MHEMTs in deep space, biomedical, scientific, military, communication areas and so forth.
Proceedings ArticleDOI
D-band low-noise amplifier MMIC with 50 % bandwidth and 3.0 dB noise figure in 100 nm and 50 nm mHEMT technology
TL;DR: In this article, the authors present the development of a wideband low-noise amplifier MMIC in the D-band with a smart combination of coplanar transmission lines and active devices to minimize noise figure.
References
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Proceedings ArticleDOI
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Arnulf Leuther,Axel Tessmann,Ingmar Kallfass,R. Losch,Matthias Seelmann-Eggebert,Niklas Wadefalk,F. Schafer,J. D. Gallego Puyol,Michael Schlechtweg,Michael Mikulla,Oliver Ambacher +10 more
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A W-band InAs/AlSb low-noise/low-power amplifier
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Proceedings ArticleDOI
An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier
Jonathan Hacker,J. Bergman,G. Nagy,G. Sullivan,C. Kadow,H.-K. Lin,Arthur C. Gossard,Mark J. W. Rodwell,Bobby Brar +8 more
TL;DR: An antimonide-based compound semiconductor (ABCS) microstrip MMIC, a W-band low-noise amplifier using 0.2-μm gate length InAs/AlSb metamorphic HEMTs, has been fabricated and characterized on a 50 μm GaAs substrate.
Proceedings ArticleDOI
A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier
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Proceedings ArticleDOI
450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology
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