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Journal ArticleDOI

Competing channels in single-electron tunneling through a quantum dot.

J. Weis, +3 more
- 13 Dec 1993 - 
- Vol. 71, Iss: 24, pp 4019-4022
TLDR
It is shown that transport occurring via transitions between ground states with different numbers of electrons can be suppressed by the occupation of excited states.
Abstract
Coulomb blockade effects are investigated in lateral transport through a quantum dot defined in a two-dimensional electron gas. Tunneling through excited states of the quantum dot is observed for various tunneling barriers. It is shown that transport occurring via transitions between ground states with different numbers of electrons can be suppressed by the occupation of excited states. Measurements in a magnetic field parallel to the current give evidence for tunneling processes involving states with different spin.

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Journal ArticleDOI

Spins in few-electron quantum dots

TL;DR: In this article, the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint, are described, and various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements.
Journal ArticleDOI

Kondo effect in a single-electron transistor

TL;DR: In this paper, the binding energy of the spin singlet has been observed in a single-electron transistor (SET) with only two electrodes and without control over the structure.
Journal ArticleDOI

Kondo Physics in a Single Electron Transistor

TL;DR: Meir et al. as mentioned in this paper reported measurements on a new generation of SETs that display all the aspects of the Kondo phenomenon: the spin singlet forms and causes an enhancement of the zero-bias conductance when the number of electrons on the artificial atom is odd but not when it is even.
Journal ArticleDOI

Electronic structure of quantum dots

TL;DR: In this paper, the properties of quasi-two-dimensional semiconductor quantum dots are reviewed, and the formation of the so-called maximum-density droplet and its edge reconstruction is discussed.
Journal ArticleDOI

Electrons in artificial atoms

TL;DR: In this article, the number of electrons in these "artificial atoms" and the energy required to add successive electrons were investigated. But the authors were restricted to experiments in a regime that is inaccessible to experiments on real atoms.
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