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Compositional and structural characterization of silicon nanoparticles embedded in silicon rich oxide

TLDR
In this paper, a dielectric material that contains Si nanoparticles, thus showing novel physical characteristics which permits its use in optoelectric materials, is described and compared to Silicon Rich Oxide (SRO).
Abstract
Resumen en: Silicon Rich Oxide (SRO) is a dielectric material that contains Si nanoparticles, thus showing novel physical characteristics which permitsits use in opt

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Morphological, compositional, structural, and optical properties of Si-nc embedded in SiOx films.

TL;DR: The dependence of PL on the composition, structure, and morphology of the Si-ncs embedded in a matrix of non-stoichiometric SiOx films is analyzed to obtain a relationship between composition, Si-nc size, energy bandgap, PL, and surface morphology.
Journal ArticleDOI

Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD.

TL;DR: The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiOx matrix is present, which leads to good possibilities for proposed novel applications in optoelectronic devices.
Journal ArticleDOI

On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition

TL;DR: In this article, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented.
Journal ArticleDOI

UV enhancement of silicon solar cells using thin SRO films

TL;DR: In this article, the electrical and optical properties of silicon solar cells with a layer of silicon oxide (SiO2) deposited by SILOX, and with a silicon rich oxide (SRO) film obtained by LPCVD containing silicon nanoparticles (Si-nps) were made.
Journal ArticleDOI

Twofold SiOx Films Deposited by HFCVD: Its Optical, Compositional and Electrical Properties

TL;DR: In this paper, two-fold non-stoichiometric silicon oxide (SiOx) films before and after thermal annealing are characterized by different techniques and the absorption and emission properties are correlated w ith quantum effects in Si-nc and defects.
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