Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor
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In this paper, the static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported.Abstract:
Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported. The 2.4 mm2 SiC BJT show good static and switching behavior. The current gain is low compared to literature, but several issues have been identified and can be improved. For the first time, the Short-circuit ruggedness of a 10 kV SiC-BJT is reported. These tests show outstanding performance with at least 16 µs withstand time. Several samples have been brought to failure and revealed an outstanding 52.1 J/cm2 of short-circuit critical energy at 32% of breakdown voltage. The failure seems to happen on the top face metallization since the devices failed in blocked mode and the base-emitter terminals shorted. The SiC BJT handles without failing at least 3 times the critical Short-circuit energy of the commercial SiC MOSFETs. In addition, switching performance is much better than that of Si-IGBTs.read more
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References
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Journal ArticleDOI
A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs
G. Romano,Asad Fayyaz,Michele Riccio,Luca Maresca,Giovanni Breglio,Alberto Castellazzi,Andrea Irace +6 more
TL;DR: In this paper, the behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated and two different SC failure phenomena are thoroughly reported.
Journal ArticleDOI
21-kV SiC BJTs With Space-Modulated Junction Termination Extension
TL;DR: In this article, a 20kV-class small area (0.035 mm2) 4H-SiC bipolar junction transistors were implemented with edge termination techniques featuring two-zone junction termination extension and space-modulated rings.
Proceedings ArticleDOI
Short-circuit failure mechanism of SiC power MOSFETs
G. Romano,Luca Maresca,Michele Riccio,Vincenzo d'Alessandro,Giovanni Breglio,Andrea Irace,Asad Fayyaz,Alberto Castellazzi +7 more
TL;DR: In this paper, failure mechanisms during short-circuit conditions of Silicon Carbide Power MOSFETs are analyzed, and a possible theoretical explanation is provided through experimental and numerical analyses.
Journal ArticleDOI
Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Reza Ghandi,Benedetto Buono,Martin Domeij,Romain Esteve,Adolf Schöner,Jisheng Han,Sima Dimitrijev,Sergey A. Reshanov,C.-M. Zetterling,Mikael Östling +9 more
TL;DR: In this article, the performance of bipolar junction transistor (BJT) is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface passivation layers.