Saeed Jahdi

TL;DR: The effectiveness of common techniques of mitigating shoot-through, including bipolar gate drives, multiple gate resistance switching paths, and external gate-source and snubber capacitors, has been evaluated for both technologies at different temperatures and switching rates and shows that solutions are less effective for SiC-MOSFETs.

TL;DR: The future of power conversion at low-to-medium voltages (around 650 V) poses a very interesting debate with all the major device manufacturers releasing different technology variants ranging from SiC Trench MOSFETs, SiC Planar MOSFs, cascode-driven WBG Fets, silicon NPT and Field-stop IGBTs, silicon super-junction MOSfETs and enhancement mode GaN high electron mobility transistors (HEMTs).

TL;DR: In this article, the tradeoff between the switching energy and electrothermal robustness is explored for 1.2kV SiC MOSFET, silicon power MOS-FET and 900-V CoolMOS body diodes at different temperatures.

TL;DR: In this paper, a comparative analysis between 1.2-kV SiC MOSFET/Schottky diodes and silicon IGBT/p-i-n diode technologies for EV drive-train performance is presented.

TL;DR: In this article, a 1.2-kV/24-A SiC-MOSFET and a Si-Insulated gate bipolar transistor (IGBT) have been electrothermally stressed in unclamped inductive switching conditions at different ambient temperatures ranging from −25 °C to 125 °C.