Journal ArticleDOI
Design Considerations of Junction Transistors at Higher Frequencies: Based upon an Accurate Equivalent Circuit
H. Statz,E. A. Guillemin,R. A. Pucel +2 more
- Vol. 42, Iss: 11, pp 1620-1628
TLDR
In this paper, the analytical solution of the diffusion equation has been used to construct an accurate equivalent circuit of the junction transistor, where all network components are expressed in terms of the physical parameters of the transistor.Abstract:
The analytical solution of the diffusion equation has been used to construct an accurate equivalent circuit of the junction transistor. All network components are expressed in terms of the physical parameters of the transistor. This network has been used to calculate Mason's U-function, which in turn gives the highest frequency at which a transistor can give a power gain. From the derived formula, it is possible to see how the physical parameters interact to limit the frequency response. The design requirements for a given maximum frequency can be obtained from the formulas; a few examples are discussed. The accurate equivalent circuit will be helpful in designing transistors for more specialized applications.read more
Citations
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Journal ArticleDOI
Power gain in feedback amplifiers, a classic revisited
TL;DR: A tutorial review of a classic paper by Samuel J. Mason (1954), which contained the first definition of a unilateral power gain for a linear two-port and the first proof that this grain is invariant with respect to linear lossless reciprocal four-port embeddings, is described.
Journal ArticleDOI
High-Frequency Power Gain of Junction Transistors
TL;DR: In this article, a theoretical model of a junction transistor comprising the ideal one-dimensional model plus a base impedance, which may be complex and frequency-dependent as in the case of grown-junction transistors, is introduced for the network to obtain an expression for maximum available power gain in terms of fundamental device parameters.
Journal ArticleDOI
Electric Network Representation of Transistors-A Survey
TL;DR: In this paper, the various methods used to describe the electric-circuit properties of a transistor are reviewed, and the advantages of this procedure are indicated. But the main focus of this paper is on high-frequency representation for junction transistors.
Journal ArticleDOI
Approximate Equivalent Circuits to Understand Tradeoffs in Geometry of On-Chip Inductors
Weiyu Leng,Asad A. Abidi +1 more
TL;DR: In this paper, an approximate frequency-independent equivalent circuit for integrated inductors on semiconducting substrates was developed, where the value of LCR in the equivalent circuit can be calculated directly from inductor geometry and the contribution of substrate capacitive loss and benefits of a substrate shield.
Journal ArticleDOI
Solution of a Transistor Transient Response Problem
TL;DR: In this article, the transient response of a grounded-base junction transistor operating in the short-circuited output condition is compared with a transient response derived from the conventional approximate form for the current transfer function, and the response to both a unit impulse and a unit step is calculated.
References
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Journal ArticleDOI
Design theory of junction transistors
TL;DR: In this paper, the small signal ac transmission characteristics of junction transistors are derived from physical structure and bias conditions, and the effects of minority carrier flow and of depletion layer capacitances arc analyzed for a one dimensional model.
Journal ArticleDOI
The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor
TL;DR: The surface-barrier transistor as discussed by the authors is a semiconductor transducer that operates at frequencies in excess of 60 cm while displaying the lowvoltage, lower power consumption and low noise properties of transistors hitherto confined to much lower frequencies.
Journal ArticleDOI
A P-N-P Triode Alloy-Junction Transistor for Radio-Frequency Amplification
C. W. Mueller,J. I. Pankove +1 more
TL;DR: In this article, the performance of alloy-junction transistors has been improved by using a thick wafer of low-resistance germanium and placing the active junctions on a very thin section produced by drilling a well into the wafer.