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Proceedings ArticleDOI

Design of ultra low noise & high gain low noise amplifier using capacitive shunt feedback for UHF wind profiling radar application

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TLDR
In this paper, a single stage cascode pseudomorphic high electron mobility transistor (pHEMT) low noise amplifier (LNA) using a shunt feedback capacitor at 915 MHz for UHF wind profiling radar application is presented.
Abstract
This paper presents a single stage cascode pseudomorphic high electron mobility transistor (pHEMT) low noise amplifier (LNA) using a shunt feedback capacitor at 915 MHz for UHF wind profiling radar application. Capacitive shunt feedback is a solution for simultaneous noise and power match. The source degenerated inductance topology is used with the cascode transistor capacitive shunt feedback to improve stability, input and output return losses, and noise figure. Using cascode transistor capacitive shunt feedback excellent noise figure and gain (S 2 i) are obtained. Low cost and low loss dielectric substrate RT/duroid RO4003C is used in the LNA design. Simulated results of LNA show that overall gain of 25.311 dB and noise figure (NF) of 0.258 dB. Input and output return losses are less than −15 dB. To characterize linearity, third order input intercept point and third order output intercept is simulated as 50.62 ilBm, 69.60 dBm respectively.

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Citations
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Proceedings ArticleDOI

Ultra Low Noise Figure, Low Power Consumption Ku- Band LNA with High Gain for Space Application

TL;DR: In this paper, a Ku-band LNA at 13– 16 GHz is designed with low NF, high gain, and low power consumption for space application and implemented with three-stage cascade source degeneration technique.
Proceedings ArticleDOI

Design and implementation of microwave integrated ultra low noise amplifier for receiver application

TL;DR: In this article, the design and implementation of microwave integrated ultra-low-noise amplifier (LNA) is proposed at ISM-band, 2.45 GHz with a gain of 7.87 dB and an NF of 0.893 dB.
Proceedings ArticleDOI

Restive Feedback Cascaded Ultra Low Noise Figure and High Gain Ku-Band LNA for Space Application

TL;DR: To achieve high gain and low noise figure (NF), resistive feedback in conjunction with source degeneration is used and InGaAs HEMT technology is used, and Ku Band at 14 GHz LNA is designed for space application.
References
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Journal ArticleDOI

Wideband Common-Gate CMOS LNA Employing Dual Negative Feedback With Simultaneous Noise, Gain, and Bandwidth Optimization

TL;DR: In this paper, a wideband common-gate (CG) LNA architecture was proposed to achieve broadband impedance matching, low noise, large gain, enhanced linearity, and wide bandwidth concurrently by employing an efficient and reliable dual negativefeedback.
Journal ArticleDOI

InAs/AlSb HEMT and Its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers

TL;DR: In this paper, two antimonide-based compound semiconductor (ABCS) microstrip monolithic microwave integrated circuits (MMICs) have been fabricated and characterized on a GaAs substrate.
Journal ArticleDOI

Analysis and Design of a Reconfigurable Multimode Low-Noise Amplifier Utilizing a Multitap Transformer

TL;DR: In this paper, a reconfigurable multimode low-noise amplifier (LNA) capable of single-band, concurrent dual-band and ultra-wideband operation is proposed.
Journal ArticleDOI

0.6–3-GHz Wideband Receiver RF Front-End With a Feedforward Noise and Distortion Cancellation Resistive-Feedback LNA

TL;DR: In this paper, a wideband receiver RF front-end, including a resistive negative feedback wideband low-noise amplifier (LNA) with feedforward noise and distortion cancellation and a current commutating down conversion passive mixer with biquad trans-impedance amplifier, is presented.
Journal ArticleDOI

A CMOS MedRadio Receiver RF Front-End With a Complementary Current-Reuse LNA

TL;DR: In this paper, a single-ended complementary current-reuse low-noise amplifier (CCRLNA) is proposed that achieves a power gain of 20 dB, noise figure (NF) of 2.8 dB, IIP3 of -8.1 dBm, and second-order intercept point of +34 dBm while consuming only 150 μW at 1-V supply voltage.