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Journal ArticleDOI

Development of radiation-tolerant silicon microstrip sensor for the ATLAS inner tracker at the SLHC

Yoshinobu Unno
- 01 Nov 2010 - 
- Vol. 623, Iss: 1, pp 165-167
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TLDR
In this article, the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V.
Abstract
We have established the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V. In comparison of wafer materials, little advantage was observed in the 6 in. p-type MCZ material to the p-FZ that was available in Japan. The evolution of the charge collection as a function of bias voltage showed that the proton-irradiated samples with apparent lower full depletion voltage collected less charge at saturation than the neutron irradiated samples.

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Citations
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Journal ArticleDOI

Signal and charge collection efficiency of n-in-p strip detectors after mixed irradiation to HL-LHC fluences

TL;DR: In this paper, six planar n-in-p strip sensors produced by Hamamatsu Photonics were irradiated in consecutive irradiation steps with pions of 280 Mev/c, protons of 25 Mev)/c and reactor neutrons resulting in a combined fluence of up to 3×10 15 1/MeV neutron equivalent particles per square centimeter (n eq / cm 2 ).
References
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Journal ArticleDOI

3D — A proposed new architecture for solid-state radiation detectors

TL;DR: In this paper, a three-dimensional array of electrodes that penetrate into the detector bulk is described, and a new architecture for solid-state radiation detectors using a 3D arrays of electrodes is described.
Journal ArticleDOI

Simulation of non-ionising energy loss and defect formation in silicon

TL;DR: In this paper, a simulation model of migration and clustering of the produced primary defects is developed and it is shown that the model is consistent with experimental observations on standard and oxygen-enriched silicon, but the model makes the rather dramatic prediction that NIEL scaling of leakage current and effective doping concentration can be violated significantly even in standard silicon.
Journal ArticleDOI

Active-edge planar radiation sensors

TL;DR: A new type of silicon radiation sensor in which the device is active to within a few microns of the mechanical edge is developed, which is made by a plasma etcher rather than a diamond saw.
Journal ArticleDOI

Development of Radiation Hard ${\rm N}^{+}$ -on-P Silicon Microstrip Sensors for Super LHC

TL;DR: In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
Journal ArticleDOI

SLHC upgrade of the ATLAS SCT tracker

TL;DR: In this article, an n-in-p silicon microstrip sensor has been fabricated that tolerates bias voltage up to ∼1000 V, in 150mm-diameter FZ wafers from industry.
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