Journal ArticleDOI
Development of radiation-tolerant silicon microstrip sensor for the ATLAS inner tracker at the SLHC
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In this article, the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V.Abstract:
We have established the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V. In comparison of wafer materials, little advantage was observed in the 6 in. p-type MCZ material to the p-FZ that was available in Japan. The evolution of the charge collection as a function of bias voltage showed that the proton-irradiated samples with apparent lower full depletion voltage collected less charge at saturation than the neutron irradiated samples.read more
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First bulk and surface results for the ATLAS ITk Strip stereo annulus sensors
R. F. H. Hunter,Syed Haider Abidi,A. A. Affolder,J. Bohm,J. Botte,B. Ciungu,Karola Dette,Zdenek Dolezal,Carlos Escobar,Vitaliy Fadeyev,J. Fernandez-Tejero,C. García Argos,D. Gillberg,Kazuhiko Hara,M. Hauser,Karl Jakobs,J. S. Keller,Peter Kodys,Thomas Koffas,Z. Kotek,J. Kroll,Carlos Lacasta,V. Latonova,J. Loenker,Daniele Madaffari,Marcela Mikestikova,M. Miñano,S. Y. Ng,R. S. Orr,Ulrich Parzefall,D. Rodriguez,U. Soldevila,J. Stastny,M. Stegler,J. Suzuki,R. J. Teuscher,Yoshinobu Unno,Sayaka Wada,M. Wiehe,L. A. M. Wiik-Fuchs,F. Wizemann,V. Zahradnik +41 more
TL;DR: In this article, a novel microstrip sensor geometry, the stereo annulus, has been developed for use in the end-cap of the ATLAS experiment's strip tracker upgrade at the HL-LHC.
Journal ArticleDOI
Signal and charge collection efficiency of n-in-p strip detectors after mixed irradiation to HL-LHC fluences
Susanne Kuehn,T. Barber,Gianluigi Casse,Paul Dervan,Adrian Driewer,Adrian Driewer,Dean Forshaw,T. Huse,Karl Jakobs,Ulrich Parzefall +9 more
TL;DR: In this paper, six planar n-in-p strip sensors produced by Hamamatsu Photonics were irradiated in consecutive irradiation steps with pions of 280 Mev/c, protons of 25 Mev)/c and reactor neutrons resulting in a combined fluence of up to 3×10 15 1/MeV neutron equivalent particles per square centimeter (n eq / cm 2 ).
References
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TL;DR: In this paper, a three-dimensional array of electrodes that penetrate into the detector bulk is described, and a new architecture for solid-state radiation detectors using a 3D arrays of electrodes is described.
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Simulation of non-ionising energy loss and defect formation in silicon
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Development of Radiation Hard ${\rm N}^{+}$ -on-P Silicon Microstrip Sensors for Super LHC
K. Hara,K. Inoue,A. Mochizuki,T. Meguro,H. Hatano,Yoichi Ikegami,T. Kohriki,Susumu Terada,Yoshinobu Unno,Kazuhisa Yamamura,S. Kamata +10 more
TL;DR: In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
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SLHC upgrade of the ATLAS SCT tracker
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