Journal ArticleDOI
Device physics of quantum well infrared photodetectors
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In this paper, a detailed study of a wide variety of quantum well infrared photodetectors, which were chosen to have large differences in their optical and transport properties, is presented.Abstract:
The author presents a detailed study of a wide variety of quantum well infrared photodetectors, which were chosen to have large differences in their optical and transport properties. Intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasicontinuum and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot-carrier mean free path, net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity.read more
Citations
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Threshold current density calculations for far-infrared semiconductor lasers
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References
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Journal ArticleDOI
First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
L. C. West,S. J. Eglash +1 more
TL;DR: In this paper, a dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST).
Journal ArticleDOI
New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
TL;DR: In this article, a 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs was proposed, which achieved a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
Journal ArticleDOI
High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
TL;DR: In this article, a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm was used to achieve a blackbody detectivity of 1.0×1010 cm (Hz) 1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.
Journal ArticleDOI
Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
B. F. Levine,R. J. Malik,James A. Walker,Kwong-Kit Choi,C. G. Bethea,D. A. Kleinman,J. M. Vandenberg +6 more
TL;DR: In this article, the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices was measured, with 95% of the incident infrared energy being absorbed.
Journal ArticleDOI
New mode of IR detection using quantum wells
D. D. Coon,R. P. G. Karunasiri +1 more
TL;DR: In this paper, a new mode of IR detection using photoemission from a single quantum well is proposed and optimization of the device performance by the proper choice of parameters is discussed.